Invention Grant
- Patent Title: Method of making a magnetic tunnel junction device
- Patent Title (中): 制造磁隧道结装置的方法
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Application No.: US11080092Application Date: 2005-03-14
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Publication No.: US06998662B2Publication Date: 2006-02-14
- Inventor: Heon Lee
- Applicant: Heon Lee
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Agent Trueman H Denny
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119

Abstract:
A method of making a magnetic tunnel junction device is disclosed. The magnetic tunnel junction device includes a magnetic tunnel junction stack and an electrically non-conductive spacer in contact with a portion of the magnetic tunnel junction stack. The spacer electrically insulates a portion of the magnetic tunnel junction stack from an electrically conductive material used for a via that is in contact with the magnetic tunnel junction stack and a top conductor. The spacer can also prevent an electrical short between a bottom conductor and the top conductor. The spacer can prevent electrical shorts when the magnetic tunnel junction stack and a self-aligned via are not aligned with each other.
Public/Granted literature
- US20050156215A1 METHOD OF MAKING A MAGNETIC TUNNEL JUNCTION DEVICE Public/Granted day:2005-07-21
Information query
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