- 专利标题: Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
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申请号: US10774456申请日: 2004-02-10
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公开(公告)号: US06999346B2公开(公告)日: 2006-02-14
- 发明人: In-kyeong Yoo , Byong-man Kim
- 申请人: In-kyeong Yoo , Byong-man Kim
- 申请人地址: KR Suwon
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon
- 代理机构: Lee & Morse, P.C.
- 优先权: KR2001-1549 20010111
- 主分类号: G11C13/07
- IPC分类号: G11C13/07
摘要:
A memory device including a single transistor having functions of RAM and ROM and methods for operating and manufacturing the same are provided. The memory device includes a single transistor formed on a substrate. The transistor may be a memory transistor having a gate with a nonvolatile memory element, or the nonvolatile memory element is provided between the transistor and the substrate.
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