Invention Grant
- Patent Title: Cross point resistive memory array
- Patent Title (中): 交叉点电阻式存储器阵列
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Application No.: US10814094Application Date: 2004-03-30
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Publication No.: US07002197B2Publication Date: 2006-02-21
- Inventor: Frederick A. Perner , Manish Sharma
- Applicant: Frederick A. Perner , Manish Sharma
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A cross point resistive memory array has a first array of cells arranged generally in a plane. Each of the memory cells includes a memory storage element and is coupled to a diode. The diode junction extends transversely to the plane of the array of memory cells.
Public/Granted literature
- US20050161715A1 Cross point resistive memory array Public/Granted day:2005-07-28
Information query
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