公开(公告)号：US07002197B2

公开(公告)日：2006-02-21

申请号：US10814094

申请日：2004-03-30

申请人： Frederick A. Perner ,  Manish Sharma

发明人： Frederick A. Perner ,  Manish Sharma

IPC分类号： H01L29/76

CPC分类号： H01L27/224 ,  G11C11/16 ,  H01L27/24

摘要： A cross point resistive memory array has a first array of cells arranged generally in a plane. Each of the memory cells includes a memory storage element and is coupled to a diode. The diode junction extends transversely to the plane of the array of memory cells.

摘要翻译： 交叉点电阻存储器阵列具有通常布置在平面中的第一阵列阵列。 每个存储单元包括存储器存储元件并且耦合到二极管。 二极管结横向延伸到存储单元阵列的平面。

公开(公告)号：US06667901B1

公开(公告)日：2003-12-23

申请号：US10426381

申请日：2003-04-29

申请人： Frederick A. Perner ,  Manish Sharma ,  Manoj Bhattacharyya

发明人： Frederick A. Perner ,  Manish Sharma ,  Manoj Bhattacharyya

IPC分类号： G11C1115

CPC分类号： G11C11/1673 ,  G11C11/161

摘要： A magnetic memory device includes a first magnetic tunnel junction having a first reference ferromagnetic layer; a second magnetic tunnel junction having a second reference ferromagnetic layer; and an electrically conductive spacer layer between the first and second reference layers. The first and second reference layers are antiferromagnetically coupled.

摘要翻译： 磁存储器件包括具有第一参考铁磁层的第一磁性隧道结; 具有第二参考铁磁层的第二磁性隧道结; 以及在第一和第二参考层之间的导电间隔层。 第一和第二参考层是反铁磁耦合的。

公开(公告)号：US06940747B1

公开(公告)日：2005-09-06

申请号：US10854858

申请日：2004-05-26

申请人： Manish Sharma ,  Frederick A. Perner

发明人： Manish Sharma ,  Frederick A. Perner

IPC分类号： G11C11/16 ,  G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： G11C11/16 ,  H01L29/785

摘要： The present invention provides a magnetic memory device. An embodiment of the present invention includes a magnetic memory cell that is switchable between two states offering electrical resistance which are detectible by a sense current though the magnetic memory cell. The device includes a field effect transistor (FET) arrangement which has a source and a drain. The source and the drain are connected by a connecting element which projects from a portion of the device and which has an electrical conductivity that varies in response to a gate voltage applied to the connecting element. The magnetic memory cell is in electrical communication with the connecting element so that at least a portion of the sense current is in use associated with a corresponding gate voltage and the FET arrangement amplifies at least a portion of the sense current.

摘要翻译： 本发明提供一种磁存储装置。 本发明的实施例包括磁存储单元，该磁存储单元可在提供电阻的两种状态之间切换，该状态可通过磁存储单元的感测电流检测。 该器件包括具有源极和漏极的场效应晶体管（FET）装置。 源极和漏极通过从器件的一部分突出并具有响应于施加到连接元件的栅极电压而变化的导电性的连接元件连接。 磁存储单元与连接元件电连通，使得感应电流的至少一部分在使用中与相应的栅极电压相关联，并且FET装置放大至少一部分感测电流。

公开(公告)号：US07283150B2

公开(公告)日：2007-10-16

申请号：US10861047

申请日：2004-06-04

申请人： Manish Sharma ,  Frederick A. Perner

发明人： Manish Sharma ,  Frederick A. Perner

IPC分类号： B41J2/47 ,  G03G13/08

CPC分类号： C09D11/30 ,  B41J3/50

摘要： A flexible media magnetic printing system provides for data storage within flexible media imprinted with magnetic ink. In a particular embodiment, the printing system includes at least one reservoir of magnetic ink with magnetic particles capable of supporting high density data, and at least one reservoir of visible ink. The reservoirs are coupled to a print head including one or more ink-ejecting nozzles, which is removably or fixedly coupled to at least one magnetic read/write device. The magnetic read/write device tracks above the magnetic ink applied by the ink-ejecting nozzles to the flexible media. The magnetic read/write device writes to the magnetic ink by providing a magnetic field of sufficient intensity to re-orient the magnetic alignment within the ink to a known direction. The magnetic read/write device also reads data from flexible media, for example, paper or cloth that is imprinted with data-embedded magnetic ink. Visible or substantially invisible magnetic ink may be applied as dots within or strips beneath characters printed in visible ink. An inkjet printer head incorporating the flexible media magnetic printing system is further provided.

摘要翻译： 柔性介质磁性印刷系统提供用磁性墨水印刷的柔性介质内的数据存储。 在特定实施例中，打印系统包括至少一个具有能够支持高密度数据的磁性颗粒的磁性墨水储存器和至少一个可见墨水储存器。 储存器联接到包括一个或多个喷墨喷嘴的打印头，喷墨喷嘴可移除地或固定地耦合到至少一个磁读/写装置。 磁读/写装置在由喷墨喷嘴施加到柔性介质上的磁性油墨之上进行跟踪。 磁读/写装置通过提供足够强度的磁场来写入磁墨，以将墨中的磁对准重新定向到已知方向。 磁读/写装置还从柔性介质读取数据，例如印有数据嵌入式磁墨的纸或布。 可见或基本上不可见的磁性墨水可以作为打印在可见墨水中的字符之下或之下的点施加。 还提供了结合有柔性介质磁性印刷系统的喷墨打印头。

公开(公告)号：US07079148B2

公开(公告)日：2006-07-18

申请号：US10625016

申请日：2003-07-23

申请人： Manish Sharma ,  Frederick A. Perner

发明人： Manish Sharma ,  Frederick A. Perner

IPC分类号： G06F15/76 ,  G06F15/80 ,  G06F15/167

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G06F15/8007 ,  H01L27/10897

摘要： The invention includes a parallel processor. The parallel processor includes a plurality of non-volatile memory cells. The parallel processor additionally includes a plurality of processor elements. At least one non-volatile memory cell corresponds with each of the processor elements. The processor elements each access data from at least one corresponding non-volatile memory cell. The processor elements perform processing on the data. The non-volatile memory cells can include magnetic memory cells.

摘要翻译： 本发明包括并行处理器。 并行处理器包括多个非易失性存储单元。 并行处理器还包括多个处理器元件。 至少一个非易失性存储器单元对应于每个处理器元件。 处理器元件每个访问来自至少一个对应的非易失性存储器单元的数据。 处理器元件对数据执行处理。 非易失性存储单元可以包括磁存储单元。

公开(公告)号：US07248306B2

公开(公告)日：2007-07-24

申请号：US10897533

申请日：2004-07-23

申请人： Frederick A. Perner ,  Krzysztof Nauka

发明人： Frederick A. Perner ,  Krzysztof Nauka

IPC分类号： G02F1/136

CPC分类号： G02F1/1362 ,  G02F1/133305 ,  G02F1/1368 ,  G02F2001/136295

摘要： A method of making a lower cost active matrix display. In a particular embodiment, the method includes providing at least one first conductor upon a substrate and depositing a gate dielectric upon the first conductor and substrate. At least one paired second conductor and a pixel electrode are deposited upon the gate dielectric, with the second conductor crossing the first conductor and with a narrow gap between the paired second conductor and the pixel electrode. A semiconductor material is deposited over the paired second conductor and pixel electrode, filling the narrow gap. The narrow gap shelters a portion of the semiconductor material, which serves as a semiconductor bridge capable of functioning either as an insulator or as a channel region of a field effect transistor. The remaining, unsheltered semiconductor material is removed. A liquid crystal layer is then deposited upon the paired second conductor, the pixel electrode and the sheltered semiconductor material, and a translucent conductor is deposited upon the liquid crystal display layer. An associated display is also provided.

摘要翻译： 制作成本较低的有源矩阵显示的方法。 在特定实施例中，该方法包括在衬底上提供至少一个第一导体并在第一导体和衬底上沉积栅极电介质。 至少一对成对的第二导体和像素电极沉积在栅极电介质上，其中第二导体与第一导体交叉并且在成对的第二导体和像素电极之间具有窄间隙。 半导体材料沉积在成对的第二导体和像素电极上，填充窄间隙。 窄间隙避开半导体材料的一部分，其用作能够用作场效应晶体管的绝缘体或沟道区的半导体桥。 剩余的未加帽的半导体材料被去除。 然后将液晶层沉积在成对的第二导体，像素电极和遮蔽半导体材料上，并且半透明导体沉积在液晶显示层上。 还提供了相关联的显示。

公开(公告)号：US07242199B2

公开(公告)日：2007-07-10

申请号：US11112795

申请日：2005-04-21

申请人： R. Stanley Williams ,  Philip J Kuekes ,  Frederick A. Perner ,  Greg Snider ,  Duncan Stewart

发明人： R. Stanley Williams ,  Philip J Kuekes ,  Frederick A. Perner ,  Greg Snider ,  Duncan Stewart

IPC分类号： G01R27/08

CPC分类号： H05K7/1092 ,  H01L23/5228 ,  H01L2924/0002 ,  H01L2924/00

摘要： In various embodiments of the present invention, tunable resistors are introduced at the interconnect layer of integrated circuits in order to provide a for adjusting internal voltage and/or current levels within the integrated circuit to repair defective components or to configure the integrated circuit following manufacture. For example, when certain internal components, such as transistors, do not have specified electronic characteristics due to manufacturing defects, adjustment of the variable resistances of the tunable resistors included in the interconnect layer of integrated circuits according to embodiments of the present invention can be used to adjust internal voltage and/or levels in order to ameliorate the defective components. In other cases, the tunable resistors may be used as switches to configure integrated circuit components, including individual transistors and logic gates as well as larger, hierarchically structured functional modules and domains.

摘要翻译： 在本发明的各种实施例中，在集成电路的互连层处引入可调电阻器，以便提供用于调整集成电路内的内部电压和/或电流水平以修复有缺陷的部件或者在制造之后配置集成电路。 例如，当诸如晶体管的某些内部组件由于制造缺陷而没有指定的电子特性时，可以使用根据本发明的实施例的集成电路的互连层中包括的可调谐电阻的可变电阻的调整 以调整内部电压和/或电平以便改善有缺陷的部件。 在其他情况下，可调谐电阻器可以用作开关以配置集成电路部件，包括单独的晶体管和逻辑门以及更大的分层结构的功能模块和域。

公开(公告)号：US07180770B2

公开(公告)日：2007-02-20

申请号：US11089688

申请日：2005-03-24

申请人： Frederick A. Perner ,  Janice Nickel ,  Lung Tran

发明人： Frederick A. Perner ,  Janice Nickel ,  Lung Tran

IPC分类号： G11C11/02

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： An information storage device is provided. The information storage device may be a magnetic random access memory (MRAM) device including a resistive cross point array of spin dependent tunneling (SDT) junctions or magnetic memory elements, with word lines extending along rows of the SDT junctions and bit lines extending along the columns of the SDT junctions. The present design includes a plurality of heating elements connected in series with associated magnetic memory elements, each heating element comprising a diode. Voltage applied to a magnetic memory element and associated heating element causes reverse current to flow through the diode, thereby producing heat from the diode and heating the magnetic memory element, thereby facilitating the write function of the device.

摘要翻译： 提供信息存储装置。 信息存储装置可以是包括自旋相关隧道（SDT）结或磁存储元件的电阻交叉点阵列的磁性随机存取存储器（MRAM）装置，其中字线沿着沿着SDT结的行和沿着 SDT路口的列。 本设计包括与相关联的磁存储元件串联连接的多个加热元件，每个加热元件包括二极管。 施加到磁存储元件和相关联的加热元件的电压导致反向电流流过二极管，从而从二极管产生热量并加热磁存储元件，从而有助于器件的写入功能。

公开(公告)号：US07145797B2

公开(公告)日：2006-12-05

申请号：US11003904

申请日：2004-12-03

申请人： Frederick A. Perner

发明人： Frederick A. Perner

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： The invention includes an apparatus and method for selecting a desirable magnitude of a magnetic memory cell write current. The method includes determining a minimal magnitude of write current for writing to the magnetic memory cell, determining a maximal magnitude of write current for writing to the magnetic memory cell, and calculating the selected magnitude of magnetic memory cell write current based on the minimal magnitude of write current and the maximal magnitude of write current.

摘要翻译： 本发明包括用于选择磁存储单元写入电流的期望幅度的装置和方法。 该方法包括确定用于写入磁存储器单元的写入电流的最小幅度，确定用于写入磁存储单元的写入电流的最大幅度，以及基于最小幅度来计算所选择的磁存储单元写入电流的大小 写入电流和写入电流的最大幅度。

公开(公告)号：US07102948B2

公开(公告)日：2006-09-05

申请号：US10816482

申请日：2004-04-01

申请人： Frederick A. Perner

发明人： Frederick A. Perner

IPC分类号： G11C7/02

CPC分类号： G11C11/16 ,  G11C29/50 ,  G11C29/50008

摘要： An embodiment includes a resistance change sensor. The resistance change sensor includes a first input connected to a first resistance and a second input connected to a second resistance. The sensor further includes a resistance detector for sensing a resistive change in at least one of the first resistance and the second resistance.

摘要翻译： 实施例包括电阻变化传感器。 电阻变化传感器包括连接到第一电阻的第一输入和连接到第二电阻的第二输入。 传感器还包括用于感测第一电阻和第二电阻中的至少一个电阻变化的电阻检测器。