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US07005359B2 Bipolar junction transistor with improved extrinsic base region and method of fabrication
失效
具有改进的外在基极区域的双极结晶体管及其制造方法
- 专利标题： Bipolar junction transistor with improved extrinsic base region and method of fabrication
- 专利标题（中）： 具有改进的外在基极区域的双极结晶体管及其制造方法
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申请号： US10715971申请日： 2003-11-17
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公开(公告)号： US07005359B2公开(公告)日： 2006-02-28
- 发明人: Shahriar Ahmed , Ravindra Soman , Anand Murthy , Mark Bohr
- 申请人： Shahriar Ahmed , Ravindra Soman , Anand Murthy , Mark Bohr
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L21/331
- IPC分类号： H01L21/331
摘要：
A bipolar transistor and its fabrication are described. The extrinsic base region is formed by growing a second, more heavily doped, epitaxial layer over a first epitaxial layer. The second layer extends under, and is insulated from, an overlying polysilicon emitter pedestal.
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