发明授权
- 专利标题： Method of forming suspended transmission line structures in back end of line processing
- 专利标题（中）： 在线路处理后端形成悬挂传输线结构的方法
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申请号： US10709357申请日： 2004-04-29
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公开(公告)号： US07005371B2公开(公告)日： 2006-02-28
- 发明人: Anil K. Chinthakindi , Robert A. Groves , Youri V. Tretiakov , Kunal Vaed , Richard P. Volant
- 申请人： Anil K. Chinthakindi , Robert A. Groves , Youri V. Tretiakov , Kunal Vaed , Richard P. Volant
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Lisa U. Jaklitsch
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
A method for forming a transmission line structure for a semiconductor device includes forming an interlevel dielectric layer over a first metallization level, removing a portion of the interlevel dielectric layer and forming a sacrificial material within one or more voids created by the removal of the portion of the interlevel dielectric layer. A signal transmission line is formed in a second metallization level formed over the interlevel dielectric layer, the signal transmission line being disposed over the sacrificial material. A portion of dielectric material included within the second metallization level is removed so as to expose the sacrificial material, wherein a portion of the sacrificial material is exposed through a plurality of access holes formed through the signal transmission line. The sacrificial material is removed so as to create an air gap beneath the signal transmission line.
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