发明授权
- 专利标题： Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
- 专利标题（中）： 使用酰胺前体形成栅介质薄膜的CVD试剂组合物及其使用方法
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申请号： US09823196申请日： 2001-03-30
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公开(公告)号： US07005392B2公开(公告)日： 2006-02-28
- 发明人: Thomas H. Baum , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder
- 申请人： Thomas H. Baum , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder
- 申请人地址： US CT Danbury
- 专利权人： Advanced Technology Materials, Inc.
- 当前专利权人： Advanced Technology Materials, Inc.
- 当前专利权人地址： US CT Danbury
- 代理商 Maggie Chappuis; Marianne Fuierer; John Boyd
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L31/469 ; C07F5/00 ; B05D5/12
摘要：
A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8 alkyl, C1–C8 perfluoroalkyl, alkylsilyl and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSi(NR1R2)4-x, wherein H is hydrogen; x is from 0 to 3; Si is silicon; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1–C8 alkyl, and C1–C8 perfluoroalkyl. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.