- 专利标题： MOS transistor on an SOI substrate with a body contact and a gate insulating film with variable thickness
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申请号： US10261665申请日： 2002-10-02
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公开(公告)号： US07005705B2公开(公告)日： 2006-02-28
- 发明人: Shigenobu Maeda , Takuji Matsumoto , Toshiaki Iwamatsu , Takashi Ipposhi
- 申请人： Shigenobu Maeda , Takuji Matsumoto , Toshiaki Iwamatsu , Takashi Ipposhi
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corporation
- 当前专利权人： Renesas Technology Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2002-124180 20020425
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
It is an object to provide an SOI device capable of carrying out body fixation and implementing a quick and stable operation. A gate insulating film (11) having a thickness of 1 to 5 nm is provided between a portion other than a gate contact pad (GP) of a gate electrode (12) and an SOI layer (3), and a gate insulating film (110) having a thickness of 5 to 15 nm is provided between the gate contact pad (GP) and the SOI layer (3). The gate insulating film (11) and the gate insulating film (110) are provided continuously.
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