发明授权
- 专利标题： Method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US10944933申请日： 2004-09-21
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公开(公告)号： US07015083B2公开(公告)日： 2006-03-21
- 发明人: Shunpei Yamazaki , Setsuo Nakajima , Hidekazu Miyairi
- 申请人： Shunpei Yamazaki , Setsuo Nakajima , Hidekazu Miyairi
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权： JP2001-097226 20010329; JP2001-133220 20010427; JP2001-296087 20010927
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.
公开/授权文献
- US20050112850A1 Method of manufacturing a semiconductor device 公开/授权日：2005-05-26
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