公开(公告)号：US20080138963A1

公开(公告)日：2008-06-12

申请号：US11979587

申请日：2007-11-06

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

IPC分类号： H01L21/322

CPC分类号： H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2251/5315

摘要： After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.

摘要翻译： 通过在含有氧的气氛中照射第一激光（能量密度为400〜500mJ / cm 2）的能量密度进行半导体膜的结晶化后，除去通过照射第一激光而形成的氧化膜 。 接下来，在不含氧的气氛（比第一激光照射的能量密度高的环境）下照射第二激光，从而增加半导体膜的平坦度。

公开(公告)号：US07015083B2

公开(公告)日：2006-03-21

申请号：US10944933

申请日：2004-09-21

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

IPC分类号： H01L21/84

CPC分类号： H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2251/5315

摘要： After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.

摘要翻译： 通过在含有氧的气氛中照射第一激光（能量密度为400〜500mJ / cm 2）的能量密度进行半导体膜的结晶化后，除去通过照射第一激光而形成的氧化膜 。 接下来，在不含氧的气氛（比第一激光照射的能量密度高的环境）下照射第二激光，从而增加半导体膜的平坦度。

公开(公告)号：US07291523B2

公开(公告)日：2007-11-06

申请号：US11322658

申请日：2006-01-03

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/44

CPC分类号： H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2251/5315

摘要： After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.

摘要翻译： 通过在含有氧的气氛中照射第一激光（能量密度为400〜500mJ / cm 2）的能量密度进行半导体膜的结晶化后，除去通过照射第一激光而形成的氧化膜 。 接下来，在不含氧的气氛（比第一激光照射的能量密度高的环境）下照射第二激光，从而增加半导体膜的平坦度。

公开(公告)号：US20050112850A1

公开(公告)日：2005-05-26

申请号：US10944933

申请日：2004-09-21

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  C30B1/00 ,  H01L21/36

CPC分类号： H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2251/5315

摘要： After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.

摘要翻译： 通过在含有氧的气氛中照射第一激光（能量密度为400〜500mJ / cm 2）的能量密度进行半导体膜的结晶化后，除去通过照射第一激光而形成的氧化膜 。 接下来，在不含氧的气氛（比第一激光照射的能量密度高的环境）下照射第二激光，从而增加半导体膜的平坦度。

公开(公告)号：US06855584B2

公开(公告)日：2005-02-15

申请号：US10107592

申请日：2002-03-28

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2251/5315

摘要： After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.

摘要翻译： 通过在含有氧的气氛中照射第一激光（能量密度为400〜500mJ / cm 2）进行半导体膜的结晶化后，除去通过照射第一激光而形成的氧化膜。 接下来，在不含氧的气氛（比第一激光照射的能量密度高的环境）下照射第二激光，从而增加半导体膜的平坦度。

公开(公告)号：US07655513B2

公开(公告)日：2010-02-02

申请号：US11979587

申请日：2007-11-06

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/44

CPC分类号： H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2251/5315

摘要： After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.

摘要翻译： 通过在含有氧的气氛中照射第一激光（能量密度为400〜500mJ / cm 2）进行半导体膜的结晶化后，除去通过照射第一激光而形成的氧化膜。 接下来，在不含氧的气氛（比第一激光照射的能量密度高的环境）下照射第二激光，从而增加半导体膜的平坦度。

公开(公告)号：US20060183276A1

公开(公告)日：2006-08-17

申请号：US11322658

申请日：2006-01-03

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2251/5315

摘要： After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.

公开(公告)号：US09496406B2

公开(公告)日：2016-11-15

申请号：US13547377

申请日：2012-07-12

申请人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Akiharu Miyanaga ,  Kengo Akimoto ,  Kojiro Shiraishi

发明人： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Akiharu Miyanaga ,  Kengo Akimoto ,  Kojiro Shiraishi

IPC分类号： H01L29/786 ,  H01L27/12

CPC分类号： H01L29/78618 ,  G02F1/133345 ,  G02F1/133528 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/136286 ,  G02F1/1368 ,  G02F1/167 ,  G02F2201/123 ,  G09G3/3674 ,  G09G2310/0286 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

摘要： An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

摘要翻译： 一个实施例是包括反向交错（底栅结构）薄膜晶体管，其中使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且缓冲层设置在半导体层与源极和漏极之间 电极层。 有意地在源极和漏极电极层与半导体层之间提供具有比半导体层高的载流子浓度的缓冲层，从而形成欧姆接触。

公开(公告)号：US09176353B2

公开(公告)日：2015-11-03

申请号：US12213728

申请日：2008-06-24

申请人： Shunpei Yamazaki ,  Yukie Suzuki ,  Hideaki Kuwabara ,  Hajime Kimura ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Satoshi Kobayashi

发明人： Shunpei Yamazaki ,  Yukie Suzuki ,  Hideaki Kuwabara ,  Hajime Kimura ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Satoshi Kobayashi

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/67

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  H01L21/67207 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78678 ,  H01L29/78696

摘要： An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

公开(公告)号：US08637866B2

公开(公告)日：2014-01-28

申请号：US12490447

申请日：2009-06-24

申请人： Toshiyuki Isa ,  Yasuhiro Jinbo ,  Sachiaki Tezuka ,  Koji Dairiki ,  Hidekazu Miyairi ,  Shunpei Yamazaki ,  Takuya Hirohashi

发明人： Toshiyuki Isa ,  Yasuhiro Jinbo ,  Sachiaki Tezuka ,  Koji Dairiki ,  Hidekazu Miyairi ,  Shunpei Yamazaki ,  Takuya Hirohashi

IPC分类号： H01L29/72

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.

摘要翻译： 至少在源区和漏区侧，薄膜晶体管包括作为缓冲层的半导体层，该半导体层含有氮并且包括在栅极绝缘层和源极和漏极区之间的非晶结构中的晶体区域。 与在沟道形成区域中包含非晶半导体的薄膜晶体管相比，可以提高薄膜晶体管的导通电流。 此外，与在沟道形成区域中包含微晶半导体的薄膜晶体管相比，可以减小薄膜晶体管的截止电流。