Invention Grant
- Patent Title: Plasma processing apparatus
- Patent Title (中): 等离子体处理装置
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Application No.: US10458239Application Date: 2003-06-11
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Publication No.: US07018506B2Publication Date: 2006-03-28
- Inventor: Toshiaki Hongoh , Naoki Matsumoto , Chishio Koshimizu
- Applicant: Toshiaki Hongoh , Naoki Matsumoto , Chishio Koshimizu
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2002-203106 20020711
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/306
Abstract:
A plasma processing apparatus comprises a plate that separates a high frequency induction antenna from a vacuum chamber. The plate comprises a nonmagnetic metal plate that has an opening and a dielectric material member that seals the opening. The area of the nonmagnetic metal plate is larger than the area of the dielectric material member.
Public/Granted literature
- US20040007182A1 Plasma processing apparatus Public/Granted day:2004-01-15
Information query
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