- 专利标题： Magneto-resistance effect element magneto-resistance effect memory cell, MRAM, and method for performing information write to or read from the magneto-resistance effect memory cell
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申请号： US10034895申请日： 2001-12-28
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公开(公告)号： US07018725B2公开(公告)日： 2006-03-28
- 发明人: Akihiro Odagawa , Hiroshi Sakakima , Masayoshi Hiramoto , Nozomu Matsukawa
- 申请人： Akihiro Odagawa , Hiroshi Sakakima , Masayoshi Hiramoto , Nozomu Matsukawa
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Renner, Otto, Boisselle & Sklar, LLP
- 优先权： JP11-170486 19990617; JP11-352962 19991213
- 主分类号： B32B5/66
- IPC分类号： B32B5/66
摘要：
A magneto-resistive effect element includes a first ferromagnetic film; a second ferromagnetic film; and a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film. The first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field. The first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.