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1.发明授权Magnetic control device, and magnetic component and memory apparatus using the same 失效磁控装置及使用其的磁性部件及存储装置公开(公告)号：US06590268B2
公开(公告)日：2003-07-08
申请号：US09803571
申请日：2001-03-09
IPC分类号： H01L4300
CPC分类号： G11C11/16
摘要： A magnetic control device including an antiferromagnetic layer, a magnetic layer placed in contact with one side of the antiferromagnetic layer, and an electrode placed in contact with another side of the antiferromagnetic layer, wherein the direction of the magnetization of the magnetic layer is controlled by voltage applied between the magnetic layer and the electrode. In particular, when an additional magnetic layer is further laminated on the magnetic layer placed in contact with the antiferromagnetic layer via a non-magnetic layer, the direction of the magnetization of the controlled magnetic layer can be detected as a change in the electric resistance. Since such a magnetic control device, in principle, responds to the electric field or magnetic field, it forms a magnetic component capable of detecting an electric signal or a magnetic signal. In this case, the direction of the magnetization basically is maintained until the next signal is detected, so that such a device also can form an apparatus. Thus, a magnetic control device capable of controlling the magnetization with voltage and magnetic component and a memory apparatus using the same are provided.
摘要翻译： 一种磁控制装置，包括反铁磁层，与反铁磁层的一侧接触的磁性层和与反铁磁性层的另一侧接触的电极，其中磁性层的磁化方向由 施加在磁性层和电极之间的电压。 特别地，当通过非磁性层进一步层叠在与反铁磁性层接触的磁性层上的附加磁性层时，可以检测受控磁性层的磁化方向作为电阻的变化。 由于这种磁性控制装置原则上对电场或磁场进行响应，所以形成能够检测电信号或磁信号的磁性部件。 在这种情况下，磁化的方向基本上被维持直到检测到下一个信号，使得这样的装置也可以形成装置。 因此，提供了能够利用电压和磁性成分来控制磁化的磁控制装置和使用其的存储装置。
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2.发明申请Magnetic head and apparatus for recording/reproducing magnetic information using the same 失效用于使用其磁记录/再现磁信息的磁头和装置公开(公告)号：US20050174700A1
公开(公告)日：2005-08-11
申请号：US10896795
申请日：2004-07-22
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/11 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B5/3925 , G11B5/398 , G11B5/40 , G11B2005/3996
摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.
摘要翻译： 本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。 在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察 在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。 在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。 在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。 在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。
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3.发明授权Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell 有权磁阻效应元件，磁阻效应存储单元，MRAM以及用于执行从磁阻效应存储单元写入或读取的信息的方法公开(公告)号：US06436526B1
公开(公告)日：2002-08-20
申请号：US09596116
申请日：2000-06-16
IPC分类号： G11B566
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3204 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/222 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/26 , Y10T428/265 , Y10T428/32
摘要： A magneto-resistive effect element includes a first ferromagnetic film; a second ferromagnetic film; and a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film. The first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field. The first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.
摘要翻译： 磁阻效应元件包括第一铁磁膜; 第二铁磁膜; 以及介于所述第一铁磁膜和所述第二铁磁性膜之间的第一非磁性膜。 第一铁磁膜的磁化比通过外部磁场的第二铁磁性膜的磁化更容易旋转。 第一铁磁膜具有约2nm或更小的有效磁性厚度。
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公开(公告)号：US07018725B2
公开(公告)日：2006-03-28
申请号：US10034895
申请日：2001-12-28
IPC分类号： B32B5/66
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3204 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/222 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/26 , Y10T428/265 , Y10T428/32
摘要： A magneto-resistive effect element includes a first ferromagnetic film; a second ferromagnetic film; and a first nonmagnetic film interposed between the first ferromagnetic film and the second ferromagnetic film. The first ferromagnetic film has a magnetization more easily rotatable than a magnetization of the second ferromagnetic film by an external magnetic field. The first ferromagnetic film has an effective magnetic thickness of about 2 nm or less.
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5.发明授权公开(公告)号：US06798620B2
公开(公告)日：2004-09-28
申请号：US10441794
申请日：2003-05-20
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Hideaki Adachi , Kenji Iijima , Hiroshi Sakakima , Yasunari Sugita
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Hideaki Adachi , Kenji Iijima , Hiroshi Sakakima , Yasunari Sugita
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01F10/3272 , H01F10/3295
摘要： A magnetic head including a magnetic substrate for operating as a first electrode, a multi-layer film formed on a portion of the surface of the magnetic substrate an inter-layer insulating layer provided to cover side surfaces of the multi-layer film, a flux guide formed on surfaces of the multi-layer film and inter-layer insulating layers, a non-magnetic conductive layer formed on a surface of the flux guide, and a second electrode formed on a surface of the non-magnetic conductive layer, in which the multi-layer film includes a first magnetic layer formed on a portion of the surface of the magnetic substrate and includes a fixed layer, and a second magnetic layer including a non-magnetic layer formed on a surface of the first magnetic layer and a free layer formed on a surface of the non-magnetic layer.
摘要翻译： 一种磁头，包括用作第一电极的磁性基板，在该磁性基板的一部分表面上形成的层间绝缘层，覆盖多层膜的侧表面的多层膜， 形成在多层膜和层间绝缘层的表面上的引导件，形成在引导件的表面上的非磁性导电层和形成在非磁性导电层的表面上的第二电极，其中 多层膜包括形成在磁性基板的表面的一部分上并包括固定层的第一磁性层和包括形成在第一磁性层的表面上的非磁性层的第二磁性层， 层形成在非磁性层的表面上。
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6.发明授权公开(公告)号：US06785100B2
公开(公告)日：2004-08-31
申请号：US09829400
申请日：2001-04-09
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/11 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B5/3925 , G11B5/398 , G11B5/40 , G11B2005/3996
摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.
摘要翻译： 本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。 在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察 在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。 在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。 在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。 在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。
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7.发明授权公开(公告)号：US06977799B2
公开(公告)日：2005-12-20
申请号：US10896774
申请日：2004-07-22
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/11 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B5/3925 , G11B5/398 , G11B5/40 , G11B2005/3996
摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.
摘要翻译： 本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。 在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察 在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。 在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。 在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。 在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。
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8.发明授权公开(公告)号：US06887717B2
公开(公告)日：2005-05-03
申请号：US10223875
申请日：2002-08-19
CPC分类号： B82Y25/00 , H01F10/3254 , H01L43/12 , Y10T428/26
摘要： A magnetoresistive device including a high-resistivity layer (13), a first magnetic layer (12) and a second magnetic layer (14), the first magnetic layer (12) and the second magnetic layer (14) being arranged so as to sandwich the high-resistivity layer (13), wherein the high-resistivity layer (13) is a barrier for passing tunneling electrons between the first magnetic layer (12) and the second magnetic layer (14), and contains at least one element LONC selected from oxygen, nitrogen and carbon; at least one layer A selected from the first magnetic layer (12) and the second magnetic layer (14) contains at least one metal element M selected from Fe, Ni and Co, and an element RCP different from the metal element M; and the element RCP combines with the element LONC more easily in terms of energy than the metal element M. Accordingly, a novel magnetoresistive device having a low junction resistance and a high MR can be obtained.
摘要翻译： 一种磁电阻器件，包括高电阻率层（13），第一磁性层（12）和第二磁性层（14），第一磁性层（12）和第二磁性层（14） 所述高电阻率层（13），其中所述高电阻率层（13）是用于在所述第一磁性层（12）和所述第二磁性层（14）之间穿过隧穿电子的势垒，并且包含至少一个元素L' SUB> ONC 选自氧，氮和碳; 从第一磁性层（12）和第二磁性层（14）中选择的至少一层A包含至少一种选自Fe，Ni和Co的金属元素M和不同的元素R < 从金属元素M; 并且元件R 与元件L ON ON ON以比金属元件M更容易地组合。因此，具有低结电阻的新型磁阻器件和 可以获得高MR。
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公开(公告)号：US06778425B1
公开(公告)日：2004-08-17
申请号：US09856847
申请日：2001-08-22
IPC分类号： G11C1100
CPC分类号： H01L43/12 , G11C11/15 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01L27/222 , H01L43/08
摘要： A magneto-resistive effect memory element according to the present invention includes a first ferromagnetic film; a second ferromagnetic film; a first nonmagnetic film provided between the first ferromagnetic film and the second ferromagnetic film, a first conductive film for generating a magnetic field for causing magnetization inversion in at least one of the first ferromagnetic film and the second ferromagnetic film, the first conductive film not being electrically in contact with the first ferromagnetic film or the second ferromagnetic film; and a second conductive film and a third conductive film for supplying an electric current to the first ferromagnetic film, the first nonmagnetic film, and the second ferromagnetic film. The first ferromagnetic film and the second ferromagnetic film have different magnetization inversion characteristics with respect to the magnetic field, and the first nonmagnetic film contains at least a nitride.
摘要翻译： 根据本发明的磁阻效应存储元件包括第一铁磁膜; 第二铁磁膜; 设置在第一铁磁膜和第二铁磁膜之间的第一非磁性膜，用于产生用于在第一铁磁膜和第二铁磁膜中的至少一个中引起磁化反转的磁场的第一导电膜，第一导电膜不是 与第一铁磁膜或第二铁磁膜电接触; 以及用于向第一铁磁膜，第一非磁性膜和第二铁磁性膜提供电流的第二导电膜和第三导电膜。 第一铁磁膜和第二铁磁膜相对于磁场具有不同的磁化反转特性，并且第一非磁性膜至少含有氮化物。
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公开(公告)号：US07012790B2
公开(公告)日：2006-03-14
申请号：US10896795
申请日：2004-07-22
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/11 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B5/3925 , G11B5/398 , G11B5/40 , G11B2005/3996
摘要： The present invention provides a magnetic head having improved characteristics, using a magnetoresistive device in which current flows across the film plane such as a TMR device. In a first magnetic head of the present invention, when the area of a non-magnetic layer is defined as a device cross-section area, and the area of a yoke is defined as a yoke area, viewed along the direction perpendicular to the surface of the substrate over which the yoke and the magnetoresistive device are formed, then the device cross-section area is not less than 30% of the yoke area, so that a resistance increase of the device cross-section area is suppressed. In a second magnetic head of the present invention, a magnetoresistive device is formed on a substrate, and a yoke is provided above a non-magnetic layer constituting the device. In a third magnetic head of the present invention, the free layer of the magnetoresistive device includes at least two magnetic films and at least one non-magnetic film that are laminated alternately, and the thickness of the non-magnetic layer is not less than 2 nm and not more than 10 nm, and magnetostatic coupling is dominant. In a fourth magnetic head of the present invention, a magnetic gap is provided adjacent to the magnetoresistive device and the magnetic films are coupled antiferromagnetically.
摘要翻译： 本发明提供一种具有改进特性的磁头，其使用磁阻装置，其中电流流过诸如TMR装置的膜平面。 在本发明的第一磁头中，当非磁性层的面积被定义为器件横截面积，并且将磁轭的面积定义为磁轭面积时，沿垂直于表面的方向观察 在形成磁轭和磁阻装置的基板上，器件截面积不小于磁轭面积的30％，从而可以抑制器件截面积的电阻增加。 在本发明的第二磁头中，在基板上形成磁阻装置，在构成装置的非磁性层的上方设置磁轭。 在本发明的第三磁头中，磁阻装置的自由层包括至少两个磁性膜和交替层叠的至少一个非磁性膜，非磁性层的厚度不小于2 nm，不大于10nm，静磁耦合为主。 在本发明的第四磁头中，与磁阻装置相邻设置有磁隙，并且磁膜与反铁磁耦合。
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