发明授权
- 专利标题： Transistor with vertical dielectric structure
- 专利标题（中）： 具有垂直电介质结构的晶体管
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申请号： US10871772申请日： 2004-06-18
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公开(公告)号： US07018876B2公开(公告)日： 2006-03-28
- 发明人: Leo Mathew , Ramachandran Muralidhar
- 申请人： Leo Mathew , Ramachandran Muralidhar
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 David G. Dolezal; Robert L. King
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84 ; H01L21/8238 ; H01L21/336
摘要：
A transistor (103) with a vertical structure (113) that includes a dielectric structure (201) below a semiconductor structure (109). The semiconductor structure includes a channel region (731) and source/drain regions (707, 709). The transistor includes a gate structure (705, 703) that has a portion laterally adjacent to the semiconductor structure and a portion laterally adjacent to the dielectric structure. In one embodiment, the gate structure is a floating gate structure wherein a control gate structure (719) also includes portion laterally adjacent to the dielectric structure and a portion laterally adjacent to the semiconductor structure. In some examples, having a portion of the floating gate and a portion of the control gate adjacent to the dielectric structure acts to increase the control gate to floating gate capacitance without significantly increasing the capacitance of the floating gate to channel region.
公开/授权文献
- US20050282345A1 Transistor with vertical dielectric structure 公开/授权日：2005-12-22