发明授权
- 专利标题： Memory device with reduced cell area
- 专利标题（中）： 具有减小的单元面积的存储器件
-
申请号： US10910210申请日： 2004-08-02
-
公开(公告)号： US07019356B2公开(公告)日： 2006-03-28
- 发明人: Jozef Mitros , Victor Ivanov
- 申请人： Jozef Mitros , Victor Ivanov
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; W. James Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L31/119 ; H01L29/76 ; H01L29/94 ; H01L31/062
摘要：
The present invention provides for a memory device comprising a bulk substrate. A first lightly doped region is formed in the bulk substrate. A first active region is formed in the first lightly doped region. A second lightly doped region is formed in the bulk substrate. A second active region is formed in the second lightly doped region. A third active region is formed in the bulk substrate. An oxide layer is disposed outwardly from the bulk substrate and a floating gate layer is disposed outwardly from the oxide layer. In a particular aspect, a memory device is provided that is a single poly electrically erasable programmable read-only memory (EEPROM) with a drain or source electrode configured to remove negative charge from the gate and erase the EEPROM, without a separate erase region.
公开/授权文献
- US20060022258A1 MEMORY DEVICE WITH REDUCED CELL AREA 公开/授权日：2006-02-02
信息查询
IPC分类:
