发明授权
- 专利标题： Method and apparatus to clamp SRAM supply voltage
- 专利标题（中）： SRAM电源电压的方法和装置
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申请号： US10738216申请日： 2003-12-18
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公开(公告)号： US07020041B2公开(公告)日： 2006-03-28
- 发明人: Dinesh Somasekhar , Muhammad M. Khellah , Yibin Ye , Vivek K. De , James W. Tschanz , Stephen H. Tang
- 申请人： Dinesh Somasekhar , Muhammad M. Khellah , Yibin Ye , Vivek K. De , James W. Tschanz , Stephen H. Tang
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Fleshner & Kim, LLP
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
An apparatus and method are provided for limiting a drop of a supply voltage in an SRAM device to retain the state of the memory during an IDLE state. The apparatus may include a memory array, a sleep device, and a clamping circuit. The clamping circuit may be configured to activate the sleep device when a voltage drop across the memory array falls below a preset voltage and the memory array is in an IDLE state.
公开/授权文献
- US20050135162A1 Method and apparatus to clamp SRAM supply voltage 公开/授权日：2005-06-23
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