发明授权
- 专利标题： CMOS device
- 专利标题（中）： CMOS器件
-
申请号： US10307619申请日： 2002-12-02
-
公开(公告)号： US07022561B2公开(公告)日： 2006-04-04
- 发明人: Chien-Chao Huang , Chao-Hsing Wang , Chung-Hu Ge , Chenming Hu
- 申请人： Chien-Chao Huang , Chao-Hsing Wang , Chung-Hu Ge , Chenming Hu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8238
摘要：
A method comprising providing a substrate having an NMOS device adjacent a PMOS device and forming a first stress layer over the NMOS and PMOS devices, wherein the first stress layer comprises a first tensile-stress layer or a compression-stress layer. An etch stop layer is formed over the first stress layer, and portions of the first stress layer and the etch stop layer are removed from over the NMOS device, leaving the first stress layer and the etch stop layer over the PMOS device. A second tensile-stress layer is formed over the NMOS device and over the first stress layer and the etch stop layer, and portions of the second tensile-stress layer and the etch stop layer are removed from over the PMOS device, leaving the second tensile-stress layer over the NMOS device.
公开/授权文献
- US20040104405A1 Novel CMOS device 公开/授权日：2004-06-03
信息查询
IPC分类:
