公开(公告)号：US20060138557A1

公开(公告)日：2006-06-29

申请号：US11356865

申请日：2006-02-17

申请人： Chien-Chao Huang ,  Chao-Hsing Wang ,  Chung-Hu Ge ,  Chenming Hu

发明人： Chien-Chao Huang ,  Chao-Hsing Wang ,  Chung-Hu Ge ,  Chenming Hu

IPC分类号： H01L29/76

CPC分类号： H01L29/7843 ,  H01L21/823807 ,  H01L21/823828

摘要： A method comprising providing a substrate having an NMOS device adjacent a PMOS device and forming a first stress layer over the NMOS and PMOS devices, wherein the first stress layer comprises a first tensile-stress layer or a compression-stress layer. An etch stop layer is formed over the first stress layer, and portions of the first stress layer and the etch stop layer are removed from over the NMOS device, leaving the first stress layer and the etch stop layer over the PMOS device. A second tensile-stress layer is formed over the NMOS device and over the first stress layer and the etch stop layer, and portions of the second tensile-stress layer and the etch stop layer are removed from over the PMOS device, leaving the second tensile-stress layer over the NMOS device.

摘要翻译： 一种方法，包括提供具有邻近PMOS器件的NMOS器件的衬底，并在所述NMOS和PMOS器件上形成第一应力层，其中所述第一应力层包括第一拉伸应力层或压缩应力层。 在第一应力层上形成蚀刻停止层，并且从NMOS器件上去除第一应力层和蚀刻停止层的部分，留下PMOS器件上的第一应力层和蚀刻停止层。 第二拉伸应力层形成在NMOS器件上并且在第一应力层和蚀刻停止层上方，并且第二拉伸应力层和蚀刻停止层的部分从PMOS器件上除去，留下第二拉伸 在NMOS器件上的应力层。

公开(公告)号：US07022561B2

公开(公告)日：2006-04-04

申请号：US10307619

申请日：2002-12-02

申请人： Chien-Chao Huang ,  Chao-Hsing Wang ,  Chung-Hu Ge ,  Chenming Hu

发明人： Chien-Chao Huang ,  Chao-Hsing Wang ,  Chung-Hu Ge ,  Chenming Hu

IPC分类号： H01L21/336 ,  H01L21/8238

CPC分类号： H01L29/7843 ,  H01L21/823807 ,  H01L21/823828

摘要： A method comprising providing a substrate having an NMOS device adjacent a PMOS device and forming a first stress layer over the NMOS and PMOS devices, wherein the first stress layer comprises a first tensile-stress layer or a compression-stress layer. An etch stop layer is formed over the first stress layer, and portions of the first stress layer and the etch stop layer are removed from over the NMOS device, leaving the first stress layer and the etch stop layer over the PMOS device. A second tensile-stress layer is formed over the NMOS device and over the first stress layer and the etch stop layer, and portions of the second tensile-stress layer and the etch stop layer are removed from over the PMOS device, leaving the second tensile-stress layer over the NMOS device.

摘要翻译： 一种方法，包括提供具有邻近PMOS器件的NMOS器件的衬底，并在所述NMOS和PMOS器件上形成第一应力层，其中所述第一应力层包括第一拉伸应力层或压缩应力层。 在第一应力层上形成蚀刻停止层，并且从NMOS器件上去除第一应力层和蚀刻停止层的部分，留下PMOS器件上的第一应力层和蚀刻停止层。 第二拉伸应力层形成在NMOS器件上并且在第一应力层和蚀刻停止层上方，并且第二拉伸应力层和蚀刻停止层的部分从PMOS器件上除去，留下第二拉伸 在NMOS器件上的应力层。