- 专利标题: Contact plating apparatus
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申请号: US10360234申请日: 2003-02-06
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公开(公告)号: US07025861B2公开(公告)日: 2006-04-11
- 发明人: Nicolay Kovarsky , Michael Yang , Dmitry Lubomirsky
- 申请人: Nicolay Kovarsky , Michael Yang , Dmitry Lubomirsky
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials
- 当前专利权人: Applied Materials
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Patterson and Sheridan
- 主分类号: C25F3/30
- IPC分类号: C25F3/30 ; B23H5/06 ; C25D7/12 ; C25D5/22
摘要:
Embodiments of the invention generally provide a substrate processing system and method. The substrate processing system generally includes a fluid basin configured to contain a plating solution therein, an anode assembly positioned in a lower portion of the fluid basin, a separation membrane positioned across the fluid basin above the anode assembly, a diffusion member positioned across the fluid basin above the separation membrane, and a plating membrane positioned across the fluid basin above the diffusion member. The plating method generally includes immersing the substrate in a plating solution, the plating solution containing metal ions to be plated, contacting a plating surface of the semiconductor substrate with a plating membrane, applying a plating bias to the semiconductor substrate to plate the metal ions in the plating solution positioned adjacent the plating surface of the substrate, removing the plating surface from contact with the plating membrane for a predetermined period of time, and recontacting the plating surface with the plating membrane to continue plating the metal ions onto the plating surface.
公开/授权文献
- US20040154915A1 Contact plating apparatus 公开/授权日:2004-08-12