OXYGEN-DOPING FOR NON-CARBON RADICAL-COMPONENT CVD FILMS
    1.
    发明申请
    OXYGEN-DOPING FOR NON-CARBON RADICAL-COMPONENT CVD FILMS 有权
    用于非碳离子组分CVD膜的氧气掺杂

    公开(公告)号:US20110129616A1

    公开(公告)日:2011-06-02

    申请号:US12836991

    申请日:2010-07-15

    IPC分类号: H05H1/24

    摘要: Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.

    摘要翻译: 描述形成氧化硅层的方法。 所述方法包括同时将自由基前体和自由基 - 氧前体与无碳的含硅前体同时组合的步骤。 自由基前体和含硅前体之一含有氮。 该方法导致在衬底上沉积含硅 - 氧和氮的层。 然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有非常少的氮的氧化硅层。 自由基 - 氧前体和自由基前体可以在分离的等离子体或相同的等离子体中产生。 氧含量的增加可以通过在含氧气氛的存在下退火层而实现,并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

    ANOLYTE FOR COPPER PLATING
    2.
    发明申请
    ANOLYTE FOR COPPER PLATING 失效
    铜镀层

    公开(公告)号:US20070175752A1

    公开(公告)日:2007-08-02

    申请号:US11539477

    申请日:2006-10-06

    IPC分类号: C25B13/04

    摘要: Embodiments of the invention provide a method for plating copper into features formed on a semiconductor substrate. The method includes positioning the substrate in a plating cell, wherein the plating cell includes a catholyte volume containing a catholyte solution, an anolyte volume containing an anolyte solution, an ionic membrane positioned to separate the anolyte volume from the catholyte volume, and an anode positioned in the anolyte volume. The method further includes applying a plating bias between the anode and the substrate, plating copper ions onto the substrate from the catholyte solution, and replenishing the copper ions plated onto the substrate from the catholyte solution with copper ions transported from the anolyte solution via the ionic membrane, wherein the catholyte solution has a copper concentration of greater than about 51 g/L.

    摘要翻译: 本发明的实施例提供了一种将铜电镀到形成在半导体衬底上的特征的方法。 该方法包括将基板定位在电镀槽中,其中镀覆电池包括含有阴极电解液的阴极电解液体积,含有阳极电解液的阳极电解液体,将阳极电解液体积与阴极电解液容积分离的离子膜, 在阳极电解液中。 该方法还包括在阳极和衬底之间施加电镀偏压,从阴极电解液将铜离子镀覆到衬底上,并从阴极电解液中补充镀在衬底上的铜离子,铜离子从阳极电解液通过离子 膜,其中阴极电解液的铜浓度大于约51g / L。

    Electrochemical processing cell
    3.
    发明授权
    Electrochemical processing cell 失效
    电化学处理池

    公开(公告)号:US07247222B2

    公开(公告)日:2007-07-24

    申请号:US10268284

    申请日:2002-10-09

    IPC分类号: C25B9/00 C25C7/04 C25B9/08

    摘要: Embodiments of the invention may generally provide a small volume electrochemical plating cell. The plating cell generally includes a fluid basin configured to contain a plating solution therein, the fluid basin having a substantially horizontal weir. The cell further includes an anode positioned in a lower portion of the fluid basin, the anode having a plurality of parallel channels formed therethrough, and a base member configured to receive the anode, the base member having a plurality of groves formed into an anode receiving surface, each of the plurality of grooves terminating into an annular drain channel. A membrane support assembly configured to position a membrane immediately above the anode in a substantially planar orientation with respect to the anode surface is provided, the membrane support assembly having a plurality of channels and bores formed therein.

    摘要翻译: 本发明的实施方案通常可以提供小体积的电化学电镀单元。 电镀槽通常包括配置成在其中容纳电镀液的流体池,流体池具有基本上水平的堰。 电池还包括位于流体槽的下部的阳极,阳极具有穿过其形成的多个平行通道,以及构造成容纳阳极的基座构件,底座构件具有形成为阳极接收的多个槽 多个槽中的每一个终止于环形排水通道。 提供了一种膜支撑组件,其被配置为将膜垂直于阳极定位在相对于阳极表面的基本上平面的方向上,所述膜支撑组件具有形成在其中的多个通道和孔。

    Apparatus and method for removing contaminants from semiconductor copper electroplating baths
    5.
    发明授权
    Apparatus and method for removing contaminants from semiconductor copper electroplating baths 失效
    从半导体铜电镀浴中去除污染物的设备和方法

    公开(公告)号:US06878258B2

    公开(公告)日:2005-04-12

    申请号:US10074569

    申请日:2002-02-11

    申请人: Nicolay Kovarsky

    发明人: Nicolay Kovarsky

    IPC分类号: B01D61/44 B01D61/52 C25D21/18

    摘要: The present invention generally provides an apparatus and method for removing contaminants from a plating solution. The apparatus generally includes a plating cell having an electrolyte inlet and an electrolyte drain, an electrolyte storage unit in fluid communication with the electrolyte inlet, and an electrodialysis chamber in fluid communication with the electrolyte drain, wherein the electrodialysis chamber is generally configured to receive a portion of used electrolyte solution and remove contaminants therefrom. The method generally includes supplying an electrolyte solution to a copper plating cell, plating copper onto a substrate in the plating cell with the electrolyte solution, removing used electrolyte solution from the plating cell, and refreshing a portion of the used electrolyte solution with an electrodialysis cell.

    摘要翻译: 本发明通常提供一种从电镀液中除去污染物的装置和方法。 该设备通常包括具有电解质入口和电解液排泄物的电镀池,与电解质入口流体连通的电解质储存单元以及与电解液排出流体连通的电渗析室,其中电渗析室通常构造成接收 使用的电解质溶液的一部分并从其中除去污染物。 该方法通常包括向镀铜电池提供电解质溶液,用电解液将铜镀在电镀液中的基底上,从电镀槽中除去使用的电解质溶液,并用电渗析池刷新一部分使用的电解液 。

    METHOD AND APPARATUS FOR ELECTROPOLISHING
    6.
    发明申请
    METHOD AND APPARATUS FOR ELECTROPOLISHING 审中-公开
    电沉积的方法和装置

    公开(公告)号:US20070181441A1

    公开(公告)日:2007-08-09

    申请号:US11462640

    申请日:2006-08-04

    IPC分类号: C25F3/04 C25F7/00

    摘要: The present invention generally includes deposition and electropolishing methods and an apparatus comprising an electroplating cell and auxiliary cell. In one embodiment for electropolishing a substrate, a cycle is performed in which the substrate is alternately placed in an anolyte solution to remove material and a catholyte solution to deposit material. As the cycle is repeated successively, an exposed layer disposed on the substrate is planarized. In another embodiment, an auxiliary cell may be used to deposit the ultrathin seed layer prior to electroplating.

    摘要翻译: 本发明通常包括沉积和电解抛光方法以及包括电镀槽和辅助电池的装置。 在电抛光衬底的一个实施例中,执行循环,其中将衬底交替放置在阳极电解液中以除去材料和阴极电解液以沉积材料。 随着连续重复循环,平面化设置在基板上的曝光层。 在另一个实施例中,可以使用辅助电池在电镀之前沉积超薄种子层。

    Electroplating apparatus based on an array of anodes
    7.
    发明申请
    Electroplating apparatus based on an array of anodes 失效
    基于阳极阵列的电镀设备

    公开(公告)号:US20070068819A1

    公开(公告)日:2007-03-29

    申请号:US11435213

    申请日:2006-05-16

    IPC分类号: C25D17/00

    摘要: The present invention generally relates to apparatus and methods for plating conductive materials on a substrate. One embodiment of the present invention provides an apparatus for plating a conductive material on a substrate. The apparatus comprises a fluid basin configured to retain an electrolyte, a contact ring configured to support the substrate and contact the substrate electrically, and an anode assembly disposed in the fluid basin, wherein the anode assembly comprises a plurality of anode elements arranged in rows.

    摘要翻译: 本发明一般涉及在基片上镀敷导电材料的装置和方法。 本发明的一个实施例提供一种用于在基板上镀覆导电材料的装置。 该装置包括被配置为保持电解质的流体池,被配置为支撑基板并且电连接基板的接触环以及设置在流体槽中的阳极组件,其中阳极组件包括排成行的多个阳极元件。

    Electrochemical processing cell
    8.
    发明申请
    Electrochemical processing cell 审中-公开
    电化学处理池

    公开(公告)号:US20060237307A1

    公开(公告)日:2006-10-26

    申请号:US11473295

    申请日:2006-06-22

    IPC分类号: C25B11/00

    摘要: Embodiments of the invention may generally provide a small volume electrochemical plating cell. The plating cell generally includes a fluid basin configured to contain a plating solution therein, the fluid basin having a substantially horizontal weir. The cell further includes an anode positioned in a lower portion of the fluid basin, the anode having a plurality of parallel channels formed therethrough, and a base member configured to receive the anode, the base member having a plurality of groves formed into an anode receiving surface, each of the plurality of grooves terminating into an annular drain channel. A membrane support assembly configured to position a membrane immediately above the anode in a substantially planar orientation with respect to the anode surface is provided, the membrane support assembly having a plurality of channels and bores formed therein.

    摘要翻译: 本发明的实施方案通常可以提供小体积的电化学电镀单元。 电镀槽通常包括配置成在其中容纳电镀液的流体池,流体池具有基本上水平的堰。 电池还包括位于流体槽的下部的阳极,阳极具有穿过其形成的多个平行通道,以及构造成容纳阳极的基座构件,底座构件具有形成为阳极接收的多个槽 多个槽中的每一个终止于环形排水通道。 提供了一种膜支撑组件,其被配置为将膜垂直于阳极定位在相对于阳极表面的基本上平面的方向上,膜支撑组件具有形成在其中的多个通道和孔。

    Plating chemistry and method of single-step electroplating of copper on a barrier metal
    9.
    发明申请
    Plating chemistry and method of single-step electroplating of copper on a barrier metal 审中-公开
    电镀化学和铜在屏障金属上的单步电镀方法

    公开(公告)号:US20050274622A1

    公开(公告)日:2005-12-15

    申请号:US11012965

    申请日:2004-12-15

    摘要: Embodiments of a method of copper plating a substrate surface with a group VIII metal layer have been described. In one embodiment, a method of plating copper on a substrate surface with a group VIII metal layer comprises pre-treating the substrate surface by removing a group VIII metal surface oxide layer and/or surface contaminants and plating the substrate in a copper plating solution comprising about 50 g/l to about 300 g/l of sulfuric acid at an initial plating current higher than the critical current density to deposit a continuous copper layer on the substrate surface. The Pre-treating the substrate can be accomplished by annealing the substrate in an environment with a hydrogen-containing gas environment and/or a non-reactive gas(es) to Ru, by a cathodic treatment in an acid-containing bath, or by immersing the substrate in an acid-containing bath.

    摘要翻译: 已经描述了用VIII族金属层对基板表面进行镀铜的方法的实施例。 在一个实施例中,在基板表面上用第VIII族金属层电镀铜的方法包括通过去除第VIII族金属表面氧化物层和/或表面污染物并将该基板镀在包括 约50g / l至约300g / l的硫酸,其初始电镀电流高于临界电流密度,以在衬底表面上沉积连续的铜层。 通过在含酸浴中进行阴极处理,或通过在含酸浴中进行阴极处理,可以通过在具有含氢气体环境和/或非反应性气体的Ru的环境中对基底进行退火来实现基底的预处理 将基板浸入含酸浴中。

    Method and apparatus for acid and additive breakdown removal from copper electrodeposition bath
    10.
    发明申请
    Method and apparatus for acid and additive breakdown removal from copper electrodeposition bath 审中-公开
    从铜电沉积浴中酸和添加剂分解去除的方法和装置

    公开(公告)号:US20050133374A1

    公开(公告)日:2005-06-23

    申请号:US10739891

    申请日:2003-12-18

    IPC分类号: C25D21/18 C25D21/22

    CPC分类号: C25D21/22

    摘要: A method and apparatus for removing waste material from a plating solution is disclosed. The invention generally provides a plating cell having an electrolyte inlet and an electrolyte drain, an electrolyte storage unit in fluid communication with the electrolyte inlet, and a diffusion dialysis chamber in fluid communication with the electrolyte drain and the electrolyte storage unit. The diffusion dialysis chamber is generally configured to receive at least a portion of used electrolyte solution and remove waste material therefrom in order to provide a refreshed electrolyte solution to the electrolyte storage unit. A method generally includes supplying an electrolyte solution to a copper plating cell, plating copper onto a substrate in the plating cell with the electrolyte solution, removing used electrolyte solution from the plating cell, and refreshing a portion of the used electrolyte solution with a diffusion dialysis device.

    摘要翻译: 公开了一种从电镀液中除去废料的方法和装置。 本发明通常提供一种具有电解质入口和电解液排出物的电镀槽,与电解质入口流体连通的电解质储存单元和与电解液排出物和电解质储存单元流体连通的扩散透析室。 扩散透析室通常被配置为接收至少一部分使用的电解质溶液并从其中除去废物,以便向电解质储存单元提供刷新的电解质溶液。 一种方法通常包括向镀铜电池提供电解质溶液,用电解液将铜镀在镀覆电池中的基底上,从电镀槽中除去使用的电解液,并用扩散透析刷新一部分所用电解质溶液 设备。