发明授权
US07026249B2 SiGe lattice engineering using a combination of oxidation, thinning and epitaxial regrowth
有权
SiGe晶格工程使用氧化，稀化和外延再生长的组合
- 专利标题： SiGe lattice engineering using a combination of oxidation, thinning and epitaxial regrowth
- 专利标题（中）： SiGe晶格工程使用氧化，稀化和外延再生长的组合
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申请号： US10448954申请日： 2003-05-30
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公开(公告)号： US07026249B2公开(公告)日： 2006-04-11
- 发明人: Stephen W. Bedell , Huajie Chen , Keith E. Fogel , Devendra K. Sadana
- 申请人： Stephen W. Bedell , Huajie Chen , Keith E. Fogel , Devendra K. Sadana
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Robert M. Trepp, Esq.
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
The present invention provides a method of fabricating a SiGe-on-insulator substrate in which lattice engineering is employed to decouple the interdependence between SiGe thickness, Ge fraction and strain relaxation. The method includes providing a SiGe-on-insulator substrate material comprising a SiGe alloy layer having a selected in-plane lattice parameter, a selected thickness parameter and a selected Ge content parameter, wherein the selected in-plane lattice parameter has a constant value and one or both of the other parameters, i.e., thickness or Ge content, have adjustable values; and adjusting one or both of the other parameters to final selected values, while maintaining the selected in-plane lattice parameter. The adjusting is achieved utilizing either a thinning process or a thermal dilution process depending on which parameters are fixed and which are adjustable.
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