- 专利标题: Wafer color variation correcting method, selective wafer defect detecting method, and computer readable recording media for the same
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申请号: US09949111申请日: 2001-09-07
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公开(公告)号: US07027638B2公开(公告)日: 2006-04-11
- 发明人: Chung-sam Jun , Sang-mun Chon , Hyoung-jin Kim , Dong-chun Lee , Sang-bong Choi , Sung-gon Ryu
- 申请人: Chung-sam Jun , Sang-mun Chon , Hyoung-jin Kim , Dong-chun Lee , Sang-bong Choi , Sung-gon Ryu
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Mills & Onello, LLP
- 优先权: KR2001-25578 20010510
- 主分类号: G06K9/00
- IPC分类号: G06K9/00
摘要:
A method for correcting color variations on the surface of a wafer, a method for selectively detecting a defect from different patterns, and computer readable recording media for the same are provided. Color variations in images of different parts of a wafer can be corrected using the mean and standard deviation of grey level values for the pixels forming each of the different parts of the wafer. In addition, different threshold values are applied to metal interconnect patterns and spaces of the wafer so that a defect can be selectively detected from the different patterns. Thus, a bridge known as a fatal, or killing defect to a semiconductor device can be detected without also falsely detecting grains as fatal defects. Due to increased defect screening capacity of the methods, the defect detecting method can be further efficiently managed.
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