公开(公告)号：US07027638B2

公开(公告)日：2006-04-11

申请号：US09949111

申请日：2001-09-07

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Hyoung-jin Kim ,  Dong-chun Lee ,  Sang-bong Choi ,  Sung-gon Ryu

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Hyoung-jin Kim ,  Dong-chun Lee ,  Sang-bong Choi ,  Sung-gon Ryu

IPC分类号： G06K9/00

CPC分类号： G06T5/008 ,  G06T7/90 ,  G06T2207/20021 ,  G06T2207/30148

摘要： A method for correcting color variations on the surface of a wafer, a method for selectively detecting a defect from different patterns, and computer readable recording media for the same are provided. Color variations in images of different parts of a wafer can be corrected using the mean and standard deviation of grey level values for the pixels forming each of the different parts of the wafer. In addition, different threshold values are applied to metal interconnect patterns and spaces of the wafer so that a defect can be selectively detected from the different patterns. Thus, a bridge known as a fatal, or killing defect to a semiconductor device can be detected without also falsely detecting grains as fatal defects. Due to increased defect screening capacity of the methods, the defect detecting method can be further efficiently managed.

公开(公告)号：US06528333B1

公开(公告)日：2003-03-04

申请号：US09584671

申请日：2000-06-01

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

IPC分类号： H01L2166

CPC分类号： G01N21/21

摘要： A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.

公开(公告)号：US06515293B1

公开(公告)日：2003-02-04

申请号：US09671207

申请日：2000-09-28

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyun-suk Cho ,  Pil-sik Hyun

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyun-suk Cho ,  Pil-sik Hyun

IPC分类号： G01N2186

CPC分类号： H01L22/26 ,  G01B11/0625 ,  H01L22/12

摘要： A method of measuring the thickness of a thin layer, by which the thickness of a top layer formed on the surface of a wafer can be detected in real time, and an apparatus therefor. This method includes irradiating light onto a cell and obtaining luminance from reflected light, detecting the thickness of a thin layer in an oxide site which is adjacent to the cell, repeating the irradiating and detecting steps to obtain a plurality of luminance values from cells formed on the wafer and a plurality of thickness values of thin layers in oxide sites that are adjacent to the cells, and employing a thickness calculation formula for calculating the thickness of a top layer using the plurality of luminance values and plurality of thickness values obtained in the prior steps. The thickness of a thin layer is directly detected from the luminance of light reflected by the cell, so that it can be precisely detected in a non-destructive manner, thus making it possible to detect the thickness of a thin layer in real time during the manufacture of a semiconductor device.

摘要翻译： 测量薄层厚度的方法，通过该厚度可以实时检测在晶片表面上形成的顶层的厚度及其装置。 该方法包括将光照射到电池上并从反射光获得亮度，检测与电池相邻的氧化物部位中的薄层的厚度，重复照射和检测步骤，从而形成多个亮度值 所述晶片和与所述单元相邻的氧化物部位中的薄层的多个厚度值，并且使用使用所述多个亮度值和在先前获得的多个厚度值来计算顶层的厚度的厚度计算公式 脚步。 从单元反射的光的亮度直接检测薄层的厚度，从而可以以非破坏性的方式精确地检测薄层的厚度，从而使得可以实时地检测薄层的厚度 制造半导体器件。

公开(公告)号：US06449037B2

公开(公告)日：2002-09-10

申请号：US09864398

申请日：2001-05-25

申请人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

发明人： Chung-sam Jun ,  Sang-mun Chon ,  Sang-bong Choi ,  Hyung-suk Cho ,  Pil-sik Hyun ,  Kyu-hong Lim ,  Byung-am Lee

IPC分类号： G01N2100

CPC分类号： G01N21/21

摘要： A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches. In particular, defects including micro-scratches formed in the medium can be detected regardless of the structure underlying the medium, such as a pattern layer.

摘要翻译： 方法和装置检测在晶片表面存在缺陷，即微划痕。 光在晶片的表面上的介质上被投射到光不被可能位于介质下方的另一层反射的角度。 由晶片表面反射的光被转换为电信号，但是由于表面散射的任何光被尽可能地排除，从而有助于信号的形成。 电信号对应于从晶片表面反射的光的强度。 当光在晶片上扫描时，将电信号的值进行比较，以确定介质中是否存在缺陷。 因为投射到晶片表面上的光将被诸如微划痕的缺陷所散射，所以可以成功监测晶片是否存在这种微划痕。 特别地，可以检测到在介质中形成的微划痕的缺陷，而不管诸如图案层的介质之下的结构如何。

公开(公告)号：US06870948B2

公开(公告)日：2005-03-22

申请号：US09977238

申请日：2001-10-16

申请人： Chung-sam Jun ,  Sang-Mun Chon ,  Sang-Bong Choi ,  Kye-Weon Kim ,  Sang-Hoon Lee ,  Yu-Sin Yang ,  Sang-Min Kim ,  Sang-Kil Lee

发明人： Chung-sam Jun ,  Sang-Mun Chon ,  Sang-Bong Choi ,  Kye-Weon Kim ,  Sang-Hoon Lee ,  Yu-Sin Yang ,  Sang-Min Kim ,  Sang-Kil Lee

IPC分类号： G01B15/00 ,  G01B15/08 ,  G01N15/00 ,  G01N15/14 ,  G01N23/20 ,  G01N23/225 ,  G06T1/00 ,  G06T7/00 ,  H01L21/66 ,  G06K9/00 ,  H01L21/8242

CPC分类号： G06T7/0004 ,  G01N15/1475 ,  G01N2015/0092 ,  G06T2207/30148 ,  H01J2237/2815

摘要： A method and apparatus for numerically analyzing a growth degree of grains grown on a surface of a semiconductor wafer, in which the growth degree of grains is automatically calculated and numerated through a computer by using an image file of the surface of the semiconductor wafer scanned by an SEM. A predetermined portion of a surface of the wafer is scanned using the SEM, and the scanned SEM image is simultaneously stored into a database. An automatic numerical program applies meshes to an analysis screen frame and selects an analysis area on a measured image. Thereafter, a smoothing process for reducing an influence of noise is performed on respective pixels designated by the meshes using an average value of image data of adjacent pixels. A standardization process is then performed, based on respective images in order to remove a brightness difference between the measured images. After comparing standardized image data values of the respective pixels with a predetermined threshold value, the number of pixels whose standardized image data value is greater than the threshold value is counted. The growth degree of grains on the surface of the wafer is calculated by numerating a ratio of the counted number with respect to a total number of the pixels contained within the analysis target image.

摘要翻译： 一种用于数值分析生长在半导体晶片的表面上的晶粒的生长度的方法和装置，其中通过使用由半导体晶片的表面扫描的半导体晶片的表面的图像文件自动计算和计算晶粒的生长度 SEM。 使用SEM扫描晶片的表面的预定部分，并将扫描的SEM图像同时存储到数据库中。 自动数值程序将网格应用于分析屏幕框架，并在测量图像上选择分析区域。 此后，使用相邻像素的图像数据的平均值对由网格指定的各个像素执行用于减少噪声的影响的平滑处理。 然后基于相应的图像执行标准化处理，以便去除所测量的图像之间的亮度差异。 在将各像素的标准化图像数据值与预定阈值进行比较之后，对标准化图像数据值大于阈值的像素数进行计数。 通过对计数的数量相对于分析对象图像中包含的像素的总数的比率进行计算来计算晶片表面上的晶粒的生长度。

公开(公告)号：US06366688B1

公开(公告)日：2002-04-02

申请号：US09162267

申请日：1998-09-29

申请人： Chung-sam Jun ,  Jeong-kon Kim ,  Sang-moon Chon ,  Sang-bong Choi

发明人： Chung-sam Jun ,  Jeong-kon Kim ,  Sang-moon Chon ,  Sang-bong Choi

IPC分类号： G06K900

CPC分类号： G01R31/2886 ,  H01J2237/2817

摘要： There is provided a contact failure inspection system and method for semiconductor devices and a method of manufacturing semiconductor devices. Using digitized values for electron signals detected using a scanning electron microscope, contacts can be inspected to identify failures such as non-open contact holes. The contact failure inspection is performed by comparing the electron signal value detected from a unit area including at least one contact hole with values representative of the electron signal corresponding to a normal contact.

摘要翻译： 提供了一种用于半导体器件的接触故障检测系统和方法以及半导体器件的制造方法。 使用扫描电子显微镜检测的电子信号的数字化值可以被检查以识别诸如非开放接触孔的故障。 通过将从包括至少一个接触孔的单位区域检测到的电子信号值与表示与正常接触相对应的电子信号的值进行比较来进行接触故障检查。

公开(公告)号：US06544802B1

公开(公告)日：2003-04-08

申请号：US09685094

申请日：2000-10-11

申请人： Chung-sam Jun ,  Pil-sik Hyun

发明人： Chung-sam Jun ,  Pil-sik Hyun

IPC分类号： H01L2100

CPC分类号： H01L21/67288 ,  G01R31/311

摘要： Wafer inspection system and method which are suitable for inspection of highly integrated semiconductor devices. The wafer inspection system includes an apparatus for selectively inspecting conductive pattern defects, which includes a sensor for scanning the surface of a wafer in a noncontact manner and an RLC circuit which is connected to the sensor and converts a signal obtained from the sensor into an electrical characteristic; and an image processing computer which is connected to the apparatus for selectively inspecting conductive pattern defects. Only conductive defects are selectively extracted, thereby increasing inspection efficiency.

摘要翻译： 适用于高度集成半导体器件检查的晶圆检查系统和方法。 晶片检查系统包括用于选择性地检查导电图案缺陷的装置，其包括用于以非接触方式扫描晶片表面的传感器和连接到传感器的RLC电路，并将从传感器获得的信号转换为电 特性; 以及图像处理计算机，其连接到用于选择性地检查导电图案缺陷的装置。 仅选择性地提取导电缺陷，从而提高检查效率。

公开(公告)号：US08034641B2

公开(公告)日：2011-10-11

申请号：US12911190

申请日：2010-10-25

申请人： Woo-seok Ko ,  Chung-sam Jun ,  Hyung-su Son ,  Yu-sin Yang

发明人： Woo-seok Ko ,  Chung-sam Jun ,  Hyung-su Son ,  Yu-sin Yang

IPC分类号： H01L21/66

CPC分类号： G01Q60/30 ,  H01L22/12 ,  H01L22/14

摘要： A method for inspection of defects on a substrate includes positioning a probe of a scanning probe microscopy (SPM) over and spaced apart from a substrate, includes scanning the substrate by changing a relative position of the probe with respect to the substrate on a plane spaced apart from and parallel to the substrate, and includes measuring a value of an induced current generated via the probe in at least two different regions of the substrate. The value of the induced current is variable according to at least a shape and a material of the substrate. The method further includes determining whether a defect exists by comparing the values of the induced currents measured in the at least two different regions of the substrate.

摘要翻译： 一种用于检查衬底上的缺陷的方法，包括将扫描探针显微镜（SPM）的探针定位在衬底之上并与衬底间隔开的步骤，包括通过在相隔的平面上改变探针相对于衬底的相对位置来扫描衬底 除了并且平行于衬底，并且包括测量在衬底的至少两个不同区域中经由探针产生的感应电流的值。 感应电流的值根据至少衬底的形状和材料是可变的。 该方法还包括通过比较在衬底的至少两个不同区域中测量的感应电流的值来确定是否存在缺陷。

公开(公告)号：US06803241B2

公开(公告)日：2004-10-12

申请号：US10338832

申请日：2003-01-09

申请人： Tae-min Eom ,  Chung-sam Jun ,  Yu-sin Yang

发明人： Tae-min Eom ,  Chung-sam Jun ,  Yu-sin Yang

IPC分类号： H01L2166

CPC分类号： H01L22/12 ,  G01R31/303 ,  H01L21/76802 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of monitoring contact holes of an integrated circuit using corona charges is provided for determining whether the contact holes are open. The method includes transmitting corona charges over a unit chip having contact holes on a semiconductor wafer; measuring the surface voltage of the unit chip; making a graph illustrating a relationship between the amount of corona charges transmitted and the measured surface voltage of the unit chip; and analyzing the graph to determine whether the contact holes of the unit chip are open. According to the method of the present invention, contact holes may be monitored at an in-line state when manufacturing an integrated circuit by transmitting corona charges onto a unit chip, eliminating the need to use a scanning electronic microscope, thereby preventing a reduction in yield.

摘要翻译： 提供了使用电晕电荷监测集成电路的接触孔的方法，用于确定接触孔是否打开。 该方法包括在半导体晶片上具有接触孔的单元芯片上传送电晕电荷; 测量单元芯片的表面电压; 示出了发射的电晕电荷量与单位芯片的测量的表面电压之间的关系的曲线图; 并分析图形以确定单元芯片的接触孔是否打开。 根据本发明的方法，当通过将电晕电荷传输到单元芯片上制造集成电路时，可以以在线状态监视接触孔，从而不需要使用扫描电子显微镜，从而防止产量降低 。