发明授权
- 专利标题: P-type semiconductor manufacturing method and semiconductor device
- 专利标题(中): P型半导体制造方法和半导体装置
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申请号: US10481057申请日: 2002-06-17
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公开(公告)号: US07029939B2公开(公告)日: 2006-04-18
- 发明人: Toshiaki Chiyo , Naoki Shibata
- 申请人: Toshiaki Chiyo , Naoki Shibata
- 申请人地址: JP Aichi
- 专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人地址: JP Aichi
- 代理机构: McGinn IP Law Group, PLLC
- 优先权: JP2001-183992 20010618
- 国际申请: PCT/JP02/06027 WO 20020617
- 国际公布: WO02/103769 WO 20021227
- 主分类号: H01L21/22
- IPC分类号: H01L21/22 ; H01L21/324
摘要:
A p-GaN layer 5 comprising materials such as a Group III nitride compound semiconductor is formed on a sapphire substrate 1 through MOVPE treatment, and a first metal layer 6 made of Co/Au is formed thereon. Then in a planar electron beam irradiation apparatus using plasma, electron beams are irradiated to the p-GaN layer 5 through the first metal layer 6. Accordingly, the first metal layer 6 prevents the surface of the p-GaN layer 5 from being damaged and resistivity of the p-GaN layer 5 can be lowered. Next, a second metal (Ni) layer 10 is formed on the first metal layer 6. And the first metal layer 6 is etched through the second metal layer 10 by using fluoric nitric acid. As a result, the first metal layer is almost completely removed. Then a light-transmitting p-electrode 7 made of Co/Au is formed thereon. As a result, a p-type semiconductor having decreased contact resistance and lower driving voltage can be obtained and optical transmittance factor of the p-type semiconductor improves.