公开(公告)号：US06918961B2

公开(公告)日：2005-07-19

申请号：US10421855

申请日：2003-04-24

申请人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

发明人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  C30B25/12 ,  C30B25/14

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/32 ,  H01S5/32341 ,  Y10T428/265

摘要： A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 μm and has a substantially flat surface. The half-value width of an X-ray rocking curve of the AlN single crystal layer is not longer than 50 sec. In another device, a group III nitride compound semiconductor layer having a thickness of from 0.01 to 3.2 μm is grown at a temperature of from 1000 to 1180° C. on a sapphire substrate having a surface nitride layer having a thickness of not larger than 300 Å.

摘要翻译： III族氮化物化合物半导体器件具有在衬底上形成的衬底和AlN单晶层。 AlN单晶层的厚度为0.5〜3μm，具有大致平坦的表面。 AlN单晶层的X射线摇摆曲线的半值宽度不大于50秒。 在另一种器件中，在具有厚度不大于300的表面氮化物层的蓝宝石衬底上，在1000至1180℃的温度下生长具有0.01至3.2μm厚度的III族氮化物化合物半导体层 一个。

公开(公告)号：US06875629B2

公开(公告)日：2005-04-05

申请号：US10479590

申请日：2002-06-03

申请人： Masanobu Senda ,  Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo

发明人： Masanobu Senda ,  Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo

IPC分类号： C23C4/02 ,  C23C4/18 ,  H01L21/20 ,  H01L29/20 ,  H01L33/32 ,  H01L21/00

CPC分类号： C30B25/18 ,  C23C4/02 ,  C23C4/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  Y10S257/918

摘要： A separator layer of Ti is formed on an auxiliary substrate of sapphire or the like. An undercoat layer of TiN is formed on the separator layer. The undercoat layer is provided so that a Group III nitride compound semiconductor layer can be grown with good crystallinity on the undercoat layer. TiN is sprayed on the undercoat layer to form a thermal spray depositing layer. Then, the separator layer is chemically etched to reveal the undercoat layer. Then, a Group III nitride compound semiconductor layer is grown on a surface of the undercoat layer.

摘要翻译： 在蓝宝石等的辅助基板上形成有Ti的隔离层。 在隔离层上形成TiN的底涂层。 提供底涂层，使得能够在底涂层上生长具有良好结晶性的III族氮化物化合物半导体层。 将TiN喷涂在底涂层上以形成热喷涂沉积层。 然后，隔离层被化学蚀刻以露出底涂层。 然后，在底涂层的表面上生长III族氮化物化合物半导体层。

公开(公告)号：US06841808B2

公开(公告)日：2005-01-11

申请号：US09885046

申请日：2001-06-21

申请人： Naoki Shibata ,  Toshiaki Chiyo ,  Masanobu Senda ,  Jun Ito ,  Hiroshi Watanabe ,  Shinya Asami ,  Shizuyo Asami

发明人： Naoki Shibata ,  Toshiaki Chiyo ,  Masanobu Senda ,  Jun Ito ,  Hiroshi Watanabe ,  Shinya Asami ,  Shizuyo Asami

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/32 ,  H01L31/0328 ,  H01L27/15 ,  H01L31/0336 ,  H01L31/12

CPC分类号： H01L33/32 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007

摘要： An AlN layer having a surface of a texture structure is formed on a sapphire substrate. Then, a growth suppressing material layer is formed on the AlN layer so that the AlN layer is partially exposed to the outside. Then, group III nitride compound semiconductor layers are grown on the AlN layer and on the growth suppressing material layer by execution of an epitaxial lateral overgrowth method. Thus, a group III nitride compound semiconductor device is produced. An undercoat layer having convex portions each shaped like a truncated hexagonal pyramid is formed on a substrate. Group III nitride compound semiconductor layers having a device function are laminated successively on the undercoat layer.

摘要翻译： 在蓝宝石衬底上形成具有纹理结构表面的AlN层。 然后，在AlN层上形成生长抑制材料层，使得AlN层部分地暴露在外部。 然后，通过执行外延横向过度生长法，在AlN层和生长抑制材料层上生长III族氮化物化合物半导体层。 因此，制造了III族氮化物化合物半导体器件。 在基板上形成具有各自成形为截头六角锥的凸部的底涂层。 具有器件功能的III族氮化物化合物半导体层依次层压在底涂层上。

公开(公告)号：US06531719B2

公开(公告)日：2003-03-11

申请号：US09888519

申请日：2001-06-26

申请人： Naoki Shibata ,  Toshiaki Chiyo ,  Masanobu Senda ,  Jun Ito ,  Hiroshi Watanabe ,  Shinya Asami ,  Shizuyo Asami

发明人： Naoki Shibata ,  Toshiaki Chiyo ,  Masanobu Senda ,  Jun Ito ,  Hiroshi Watanabe ,  Shinya Asami ,  Shizuyo Asami

IPC分类号： H01L310336

CPC分类号： H01L33/32 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/184 ,  H01L31/1852 ,  H01L33/12 ,  H01L33/22 ,  H01L33/405 ,  H01S5/32341 ,  Y02E10/544 ,  Y10S438/978

摘要： A group III nitride compound semiconductor device has a substrate, a group III nitride compound semiconductor layer having a device function, and an undercoat layer formed between the substrate and the group III nitride semiconductor layer. The undercoat layer has a surface which has a texture structure, or which is trapezoid shaped in section or which is pit shaped. In addition, a reflection layer made of nitride of at least one metal selected from the group consisting of titanium, zirconium, hafnium and tantalum may be formed on a surface of the undercoat layer. Also the surface of the reflection layer is formed as a texture structure, a trapezoid shape in section or a pit shape.

摘要翻译： III族氮化物化合物半导体器件具有衬底，具有器件功能的III族氮化物化合物半导体层和形成在衬底和III族氮化物半导体层之间的底涂层。 底涂层具有具有纹理结构的表面，或者是截面呈梯形或凹坑形的表面。 此外，可以在底涂层的表面上形成由选自钛，锆，铪和钽中的至少一种金属的氮化物制成的反射层。 此外，反射层的表面也形成为纹理结构，截面为梯形或凹坑形状。

公开(公告)号：US06342404B1

公开(公告)日：2002-01-29

申请号：US09522833

申请日：2000-03-10

申请人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Shinya Asami

发明人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Shinya Asami

IPC分类号： H01L2100

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639

摘要： A group III nitride compound semiconductor device is produced according to the following manner. A separation layer made of a material which prevents group III nitride compound semiconductors from being grown thereon is formed on a substrate. Group III nitride compound semiconductors is grown on a surface of the substrate uncovered with the separation layer while keeping the uncovered substrate surface separated by the separation layer.

摘要翻译： 根据以下方式制造III族氮化物化合物半导体器件。 在衬底上形成由防止III族氮化物半导体生长的材料制成的分离层。 III族氮化物化合物半导体生长在未分离层的衬底的表面上，同时保持未被覆盖的衬底表面被分离层分离。

公开(公告)号：US6100545A

公开(公告)日：2000-08-08

申请号：US170128

申请日：1998-10-13

申请人： Toshiaki Chiyo ,  Shizuyo Noiri ,  Naoki Shibata ,  Jun Ito

发明人： Toshiaki Chiyo ,  Shizuyo Noiri ,  Naoki Shibata ,  Jun Ito

IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/46

摘要： A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.

公开(公告)号：US06593016B1

公开(公告)日：2003-07-15

申请号：US09606081

申请日：2000-06-29

申请人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

发明人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

IPC分类号： H01L2900

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/32 ,  H01S5/32341 ,  Y10T428/265

摘要： A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 &mgr;m and has a substantially flat surface. The half-value width of an X-ray rocking curve of the AlN single crystal layer is not longer than 50 sec. In another device, a group III nitride compound semiconductor layer having a thickness of from 0.01 to 3.2 &mgr;m is grown at a temperature of from 1000 to 1180° C. on a sapphire substrate having a surface nitride layer having a thickness of not larger than 300 Å.

摘要翻译： III族氮化物化合物半导体器件具有在衬底上形成的衬底和AlN单晶层。 AlN单晶层的厚度为0.5〜3μm，具有大致平坦的表面。 AlN单晶层的X射线摇摆曲线的半值宽度不大于50秒。 在另一种器件中，在具有厚度不大于300的表面氮化物层的蓝宝石衬底上，在1000至1180℃的温度下生长具有0.01至3.2μm厚度的III族氮化物化合物半导体层 一个。

公开(公告)号：US06335217B1

公开(公告)日：2002-01-01

申请号：US09525425

申请日：2000-03-14

申请人： Toshiaki Chiyo ,  Shizuyo Noiri ,  Naoki Shibata ,  Jun Ito

发明人： Toshiaki Chiyo ,  Shizuyo Noiri ,  Naoki Shibata ,  Jun Ito

IPC分类号： H01L2100

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/405 ,  H01L33/46

摘要： A GaN type semiconductor layer having a structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.

摘要翻译： 提供具有结构的GaN型半导体层，其具有与GaN类半导体层相对的表面的由Ti构成的衬底。

公开(公告)号：US07029939B2

公开(公告)日：2006-04-18

申请号：US10481057

申请日：2002-06-17

申请人： Toshiaki Chiyo ,  Naoki Shibata

发明人： Toshiaki Chiyo ,  Naoki Shibata

IPC分类号： H01L21/22 ,  H01L21/324

CPC分类号： H01L33/0095 ,  H01L21/28575 ,  H01L29/2003 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42

摘要： A p-GaN layer 5 comprising materials such as a Group III nitride compound semiconductor is formed on a sapphire substrate 1 through MOVPE treatment, and a first metal layer 6 made of Co/Au is formed thereon. Then in a planar electron beam irradiation apparatus using plasma, electron beams are irradiated to the p-GaN layer 5 through the first metal layer 6. Accordingly, the first metal layer 6 prevents the surface of the p-GaN layer 5 from being damaged and resistivity of the p-GaN layer 5 can be lowered. Next, a second metal (Ni) layer 10 is formed on the first metal layer 6. And the first metal layer 6 is etched through the second metal layer 10 by using fluoric nitric acid. As a result, the first metal layer is almost completely removed. Then a light-transmitting p-electrode 7 made of Co/Au is formed thereon. As a result, a p-type semiconductor having decreased contact resistance and lower driving voltage can be obtained and optical transmittance factor of the p-type semiconductor improves.

摘要翻译： 通过MOVPE处理在蓝宝石衬底1上形成包含III族氮化物化合物半导体的材料的p-GaN层5，在其上形成由Co / Au构成的第一金属层6。 然后在使用等离子体的平面电子束照射装置中，电子束通过第一金属层6照射到p-GaN层5。 因此，第一金属层6防止p-GaN层5的表面被损坏，并且可以降低p-GaN层5的电阻率。 接着，在第一金属层6上形成第二金属（Ni）层10。 并且通过使用氟酸硝酸将第一金属层6蚀刻通过第二金属层10。 结果，第一金属层几乎被完全去除。 然后在其上形成由Co / Au制成的透光p电极7。 结果，可以获得具有降低的接触电阻和较低驱动电压的p型半导体，并且p型半导体的光透射率提高。

公开(公告)号：US06830949B2

公开(公告)日：2004-12-14

申请号：US10258128

申请日：2002-10-21

申请人： Masanobu Senda ,  Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Shizuyo Asami

发明人： Masanobu Senda ,  Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Shizuyo Asami

IPC分类号： H01L2100

CPC分类号： C30B23/02 ,  C23C14/0036 ,  C23C14/0617 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/0062

摘要： A preferred condition for forming a Group III nitride compound semiconductor layer on a substrate by a sputtering method is proposed. When a first Group III nitride compound semiconductor layer is formed on a substrate by a sputtering method, an initial voltage of a sputtering apparatus is selected to be not higher than 110% of a sputtering voltage.

摘要翻译： 提出了通过溅射法在基板上形成III族氮化物化合物半导体层的优选条件。 当通过溅射法在基板上形成第一III族氮化物化合物半导体层时，溅射装置的初始电压被选择为不高于溅射电压的110％。