发明授权
- 专利标题： MIM capacitor
- 专利标题（中）： MIM电容器
-
申请号： US10501865申请日： 2003-09-01
-
公开(公告)号： US07030443B2公开(公告)日： 2006-04-18
- 发明人: Takuo Hino , Yoshihisa Minami
- 申请人： Takuo Hino , Yoshihisa Minami
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Hamre, Schumann, Mueller & Larson, P.C.
- 优先权： JP2002-254370 20020830; JP2002-322244 20021106
- 国际申请： PCT/JP03/11132 WO 20030901
- 国际公布： WO2004/021439 WO 20040311
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L29/76 ; H01L29/00 ; H01G4/00 ; H01G4/005
摘要：
A MIM (metal-insulator-metal) capacitor is provided with a substrate; a first metal area; a second metal area formed between the substrate and the first metal area; and a first insulating layer formed between the first metal area and the second metal area; wherein a capacitance value is determined by opposing surface areas of the first metal area and the second metal area; and the MIM capacitor is further provided with: a third metal area formed between the second metal area and the substrate; and a second insulating layer formed between the third metal area and the second metal area; wherein the third metal area is connected to a ground potential.
公开/授权文献
- US20050110068A1 Mim capacitor 公开/授权日：2005-05-26
信息查询
IPC分类:
