发明授权
US07030506B2 Mask and method for using the mask in lithographic processing 失效
在光刻加工中使用掩模的掩模和方法

Mask and method for using the mask in lithographic processing
摘要:
A method and mask to improve measurement of alignment marks is disclosed. An exemplary embodiment of the invention includes a resist mask with a patterned alignment mark comprising an assemblage of features whose spacing is smaller than the wavelength of light used to measure the alignment. In a preferred embodiment, an alignment mark patterning process alters the appearance of the alignment mark and renders an enhanced contrast with the substrate background.
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