发明授权
- 专利标题: Mask and method for using the mask in lithographic processing
- 专利标题(中): 在光刻加工中使用掩模的掩模和方法
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申请号: US10685004申请日: 2003-10-15
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公开(公告)号: US07030506B2公开(公告)日: 2006-04-18
- 发明人: Syed Shoaib Hasan Zaidi , Alois Gutmann , Gary Williams
- 申请人: Syed Shoaib Hasan Zaidi , Alois Gutmann , Gary Williams
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies, AG
- 当前专利权人: Infineon Technologies, AG
- 当前专利权人地址: DE Munich
- 代理机构: Edell, Shapiro, Finnan LLC
- 主分类号: H01L23/544
- IPC分类号: H01L23/544
摘要:
A method and mask to improve measurement of alignment marks is disclosed. An exemplary embodiment of the invention includes a resist mask with a patterned alignment mark comprising an assemblage of features whose spacing is smaller than the wavelength of light used to measure the alignment. In a preferred embodiment, an alignment mark patterning process alters the appearance of the alignment mark and renders an enhanced contrast with the substrate background.
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