- 专利标题： Method of making semiconductor devices
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申请号： US11018242申请日： 2004-12-22
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公开(公告)号： US07033899B2公开(公告)日： 2006-04-25
- 发明人: Cha-Hsin Lin , Zing-Way Pei , Shing-Chii Lu , Wen-Yi Hsieh
- 申请人： Cha-Hsin Lin , Zing-Way Pei , Shing-Chii Lu , Wen-Yi Hsieh
- 申请人地址： TW Hsinchu
- 专利权人： Industrial Technology Research Institute
- 当前专利权人： Industrial Technology Research Institute
- 当前专利权人地址： TW Hsinchu
- 代理机构： Rabin & Berdo, P.C.
- 优先权： TW93124836A 20040818
- 主分类号： H01L21/8228
- IPC分类号： H01L21/8228
摘要：
A method for fabricating semiconductor device is provided. A high stress layer formed on, under or on both sides of the transistors of the semiconductor device is employed as a cap layer. A specific region is then defined through photo resistor mask, and the stress of the region is changed by ion implanting. Therefore, compressive stress and tensile stress occur on the high stress layer. According the disclosed method, the high stress layer may simultaneously improve the characteristics of the transistors formed on the same wafer. Further, the mobility of the carriers of the device is enhanced.
公开/授权文献
- US20060040479A1 Method of making semiconductor devices 公开/授权日：2006-02-23
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