Invention Grant
- Patent Title: Methods for enhancing capacitors having roughened features to increase charge-storage capacity
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Application No.: US09965240Application Date: 2001-09-26
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Publication No.: US07034353B2Publication Date: 2006-04-25
- Inventor: Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenlin Chen , Er-Xuan Ping
- Applicant: Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenlin Chen , Er-Xuan Ping
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/76 ; H01L29/94 ; H01L31/119
Abstract:
Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.
Public/Granted literature
- US20020025650A1 Methods for enhancing capacitors having roughened features to increase charge-storage capacity Public/Granted day:2002-02-28
Information query
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