Single polysilicon process for DRAM

Invention Grant

US07037776B2 Single polysilicon process for DRAM 有权

Title translation: DRAM的单晶过程

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Patent Title: Single polysilicon process for DRAM
Patent Title (中): DRAM的单晶过程
Application No.: US10323981

Application Date: 2002-12-19
Publication No.: US07037776B2

Publication Date: 2006-05-02
Inventor: Jenn-Ming Huang , Chen-Yong Lin
Applicant: Jenn-Ming Huang , Chen-Yong Lin
Applicant Address: TW Hsinchu
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee Address: TW Hsinchu
Agency: Thomas, Kayden, Horstemeyer & Risley
Main IPC: H01L21/8242
IPC: H01L21/8242

Abstract:

A method of fabricating a DRAM cell, comprising the following steps. A substrate is provided. An isolation structure is formed within the substrate. The substrate is patterned to form nodes adjacent the isolation structure. Doped regions are formed with the substrate adjacent the nodes. A gate dielectric layer is formed over the patterned substrate, lining the nodes. A conductive layer is formed over the gate dielectric layer, filling the nodes. The conductive layer is patterned to form: a top electrode capacitor within the nodes; and respective word lines over the substrate adjacent the top electrode capacitor; each word line having exposed side walls. Source/drain regions are formed adjacent the word lines.

Abstract(Chinese):

一种制造DRAM单元的方法，包括以下步骤。提供基板。在衬底内形成隔离结构。将衬底图案化以形成邻近隔离结构的节点。掺杂区域与衬底相邻的节点形成。栅极电介质层形成在图案化衬底上，衬在节点上。导电层形成在栅介质层上，填充节点。将导电层图案化以形成：节点内的顶部电极电容器; 以及邻近顶部电极电容器的衬底上的各个字线; 每个字线具有暴露的侧壁。源极/漏极区域形成在字线附近。

Public/Granted literature

US20040121533A1 Single polysilicon process for dram Public/Granted day:2004-06-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）