发明授权
- 专利标题： Semiconductor memory device and method of fabricating the same
- 专利标题（中）： 半导体存储器件及其制造方法
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申请号： US10714909申请日： 2003-11-18
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公开(公告)号： US07037780B2公开(公告)日： 2006-05-02
- 发明人: Hideo Takagi , Takayuki Enda , Miyuki Umetsu , Tsukasa Takamatsu
- 申请人： Hideo Takagi , Takayuki Enda , Miyuki Umetsu , Tsukasa Takamatsu
- 申请人地址： US CA Sunnyvale
- 专利权人： FASL LLC
- 当前专利权人： FASL LLC
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2002-355933 20021206
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.
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