公开(公告)号：US07037780B2

公开(公告)日：2006-05-02

申请号：US10714909

申请日：2003-11-18

申请人： Hideo Takagi ,  Takayuki Enda ,  Miyuki Umetsu ,  Tsukasa Takamatsu

发明人： Hideo Takagi ,  Takayuki Enda ,  Miyuki Umetsu ,  Tsukasa Takamatsu

IPC分类号： H01L21/336

CPC分类号： H01L27/11568 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11573

摘要： A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.

摘要翻译： 在半导体衬底上形成用于存储电荷的氮化硅膜，同时在其间放置隧道氧化物膜，然后对氮化硅膜进行氢等离子体处理，以便在制造的各个工艺步骤期间有效地擦除不存在的电荷。 从而稳定半导体存储器件的阈值电压（V SUB）。

公开(公告)号：US07453116B2

公开(公告)日：2008-11-18

申请号：US11368678

申请日：2006-03-07

申请人： Hideo Takagi ,  Takayuki Enda ,  Miyuki Umetsu ,  Tsukasa Takamatsu

发明人： Hideo Takagi ,  Takayuki Enda ,  Miyuki Umetsu ,  Tsukasa Takamatsu

IPC分类号： H01L29/76

CPC分类号： H01L27/11568 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11573

摘要： A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.

摘要翻译： 在半导体衬底上形成用于存储电荷的氮化硅膜，同时在其间放置隧道氧化物膜，然后对氮化硅膜进行氢等离子体处理，以便在制造的各个工艺步骤期间有效地擦除不存在的电荷。 从而稳定半导体存储器件的阈值电压（V SUB）。

公开(公告)号：US20060145242A1

公开(公告)日：2006-07-06

申请号：US11368678

申请日：2006-03-07

申请人： Hideo Takagi ,  Takayuki Enda ,  Miyuki Umetsu ,  Tsukasa Takamatsu

发明人： Hideo Takagi ,  Takayuki Enda ,  Miyuki Umetsu ,  Tsukasa Takamatsu

IPC分类号： H01L21/336 ,  H01L29/788

CPC分类号： H01L27/11568 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11573

摘要： A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.

公开(公告)号：US20060281242A1

公开(公告)日：2006-12-14

申请号：US11363792

申请日：2006-02-28

申请人： Naoki Takeguchi ,  Yuji Mizuguchi ,  Masatomi Okanishi ,  Tsukasa Takamatsu

发明人： Naoki Takeguchi ,  Yuji Mizuguchi ,  Masatomi Okanishi ,  Tsukasa Takamatsu

IPC分类号： H01L21/8238 ,  H01L29/94 ,  H01L21/20

CPC分类号： H01L27/11568 ,  H01L27/115

摘要： A semiconductor device of the present invention includes a semiconductor substrate (10) having a bit line (14), an ONO film (16) that is provided on the semiconductor substrate (10) and has an opening (46), an interlayer insulating film (30) that is provided on the ONO film (16) and has a contact hole (40) connected to the bit line (14) and provided in the opening (46), and an insulation layer (44) provided between and separating the ONO film (16) and the contact hole (40). In forming the contact hole (40) in the interlayer insulating film (30), the ONO film (16) being provided separately from the contact hole (40) prevents the damage region from being created in the ONO film (16). This makes it possible to suppress charge loss from the trapping layer due to the damage region and provide a highly reliable semiconductor device.

摘要翻译： 本发明的半导体器件包括具有位线（14）的半导体衬底（10），设置在半导体衬底（10）上并具有开口（46）的ONO膜（16），层间绝缘膜 （30），其设置在所述ONO膜（16）上并具有连接到所述位线（14）并设置在所述开口（46）中的接触孔（40），以及绝缘层（44） ONO膜（16）和接触孔（40）。 在层间绝缘膜（30）中形成接触孔（40）时，与接触孔（40）分开设置的ONO膜（16）防止在ONO膜（16）中产生损伤区域。 这使得可以抑制由于损坏区域而导致的俘获层的电荷损失，并提供高可靠性的半导体器件。