公开(公告)号：US07037780B2

公开(公告)日：2006-05-02

申请号：US10714909

申请日：2003-11-18

申请人： Hideo Takagi ,  Takayuki Enda ,  Miyuki Umetsu ,  Tsukasa Takamatsu

发明人： Hideo Takagi ,  Takayuki Enda ,  Miyuki Umetsu ,  Tsukasa Takamatsu

IPC分类号： H01L21/336

CPC分类号： H01L27/11568 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11573

摘要： A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.

摘要翻译： 在半导体衬底上形成用于存储电荷的氮化硅膜，同时在其间放置隧道氧化物膜，然后对氮化硅膜进行氢等离子体处理，以便在制造的各个工艺步骤期间有效地擦除不存在的电荷。 从而稳定半导体存储器件的阈值电压（V SUB）。

公开(公告)号：US07453116B2

公开(公告)日：2008-11-18

申请号：US11368678

申请日：2006-03-07

申请人： Hideo Takagi ,  Takayuki Enda ,  Miyuki Umetsu ,  Tsukasa Takamatsu

发明人： Hideo Takagi ,  Takayuki Enda ,  Miyuki Umetsu ,  Tsukasa Takamatsu

IPC分类号： H01L29/76

CPC分类号： H01L27/11568 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11573

摘要： A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.

摘要翻译： 在半导体衬底上形成用于存储电荷的氮化硅膜，同时在其间放置隧道氧化物膜，然后对氮化硅膜进行氢等离子体处理，以便在制造的各个工艺步骤期间有效地擦除不存在的电荷。 从而稳定半导体存储器件的阈值电压（V SUB）。

公开(公告)号：US20060145242A1

公开(公告)日：2006-07-06

申请号：US11368678

申请日：2006-03-07

申请人： Hideo Takagi ,  Takayuki Enda ,  Miyuki Umetsu ,  Tsukasa Takamatsu

发明人： Hideo Takagi ,  Takayuki Enda ,  Miyuki Umetsu ,  Tsukasa Takamatsu

IPC分类号： H01L21/336 ,  H01L29/788

CPC分类号： H01L27/11568 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11573

摘要： A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.

公开(公告)号：US07679194B2

公开(公告)日：2010-03-16

申请号：US11783468

申请日：2007-04-10

申请人： Tatsuya Hashimoto ,  Toshiyuki Maenosono ,  Taji Togawa ,  Takayuki Enda ,  Hideo Takagi

发明人： Tatsuya Hashimoto ,  Toshiyuki Maenosono ,  Taji Togawa ,  Takayuki Enda ,  Hideo Takagi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L27/11526 ,  H01L21/02063 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/321 ,  H01L21/76801 ,  H01L21/76814 ,  H01L21/76834 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11531 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05669 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/30105 ,  H01L2924/00

摘要： Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.

摘要翻译： 公开了一种制造半导体存储器件的方法，包括在接合焊盘部分的金属互连上照射紫外线的步骤，从而可以防止在消除电荷存储的过程中由于腐蚀元件而腐蚀金属互连 在电荷存储部分中。 在接合焊盘部分的金属互连的表面上形成氧化物涂膜，并且将紫外线照射到氧化物涂膜上，以从浮动栅极擦除电荷。

公开(公告)号：US20070187833A1

公开(公告)日：2007-08-16

申请号：US11783468

申请日：2007-04-10

申请人： Tatsuya Hashimoto ,  Toshiyuki Maenosono ,  Taji Togawa ,  Takayuki Enda ,  Hideo Takagi

发明人： Tatsuya Hashimoto ,  Toshiyuki Maenosono ,  Taji Togawa ,  Takayuki Enda ,  Hideo Takagi

IPC分类号： H01L23/48

CPC分类号： H01L27/11526 ,  H01L21/02063 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/321 ,  H01L21/76801 ,  H01L21/76814 ,  H01L21/76834 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11531 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05669 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/30105 ,  H01L2924/00

摘要： Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.

摘要翻译： 公开了一种制造半导体存储器件的方法，包括在接合焊盘部分的金属互连上照射紫外线的步骤，从而可以防止在消除电荷存储的过程中由于腐蚀元件而腐蚀金属互连 在电荷存储部分中。 在接合焊盘部分的金属互连的表面上形成氧化物涂膜，并且将紫外线照射到氧化物涂膜上，以从浮动栅极擦除电荷。

公开(公告)号：US20050006672A1

公开(公告)日：2005-01-13

申请号：US10916410

申请日：2004-08-12

申请人： Tatsuya Hashimoto ,  Toshiyuki Maenosono ,  Taiji Togawa ,  Takayuki Enda ,  Hideo Takagi

发明人： Tatsuya Hashimoto ,  Toshiyuki Maenosono ,  Taiji Togawa ,  Takayuki Enda ,  Hideo Takagi

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/8247 ,  H01L23/485 ,  H01L23/52 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/788 ,  H01L29/792 ,  H01L29/768

CPC分类号： H01L27/11526 ,  H01L21/02063 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/321 ,  H01L21/76801 ,  H01L21/76814 ,  H01L21/76834 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11531 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05669 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/30105 ,  H01L2924/00

摘要： Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.

摘要翻译： 公开了一种制造半导体存储器件的方法，包括在接合焊盘部分的金属互连上照射紫外线的步骤，从而可以防止在消除电荷存储的过程中由于腐蚀元件而腐蚀金属互连 在电荷存储部分中。 在接合焊盘部分的金属互连的表面上形成氧化物涂膜，并且将紫外线照射到氧化物涂膜上，以从浮动栅极擦除电荷。

公开(公告)号：US06794248B2

公开(公告)日：2004-09-21

申请号：US10279981

申请日：2002-10-25

申请人： Tatsuya Hashimoto ,  Toshiyuki Maenosono ,  Taiji Togawa ,  Takayuki Enda ,  Hideo Takagi

发明人： Tatsuya Hashimoto ,  Toshiyuki Maenosono ,  Taiji Togawa ,  Takayuki Enda ,  Hideo Takagi

IPC分类号： H01L21336

CPC分类号： H01L27/11526 ,  H01L21/02063 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/321 ,  H01L21/76801 ,  H01L21/76814 ,  H01L21/76834 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11531 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05669 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/30105 ,  H01L2924/00

摘要： Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.

摘要翻译： 公开了一种制造半导体存储器件的方法，包括在接合焊盘部分的金属互连上照射紫外线的步骤，从而可以防止在消除电荷存储的过程中由于腐蚀元件而腐蚀金属互连 在电荷存储部分中。 在接合焊盘部分的金属互连的表面上形成氧化物涂膜，并且将紫外线照射到氧化物涂膜上，以从浮动栅极擦除电荷。

公开(公告)号：US6007732A

公开(公告)日：1999-12-28

申请号：US841787

申请日：1997-05-05

申请人： Koichi Hashimoto ,  Toshiyuki Ohtsuka ,  Fumihiko Shinpuku ,  Daisuke Matsunaga ,  Takayuki Enda

发明人： Koichi Hashimoto ,  Toshiyuki Ohtsuka ,  Fumihiko Shinpuku ,  Daisuke Matsunaga ,  Takayuki Enda

IPC分类号： H01L21/027 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/302

CPC分类号： H01L21/32139 ,  H01L21/0276 ,  H01L21/31138 ,  H01L21/32137 ,  Y10S438/952

摘要： A pattern forming method having a step of forming an amorphous carbon film on a patterning layer formed on a substrate, a step of forming a photoresist film on the amorphous carbon film, a step of selectively exposing and developing the photoresist film to form a photoresist pattern, and a step of successively dry-etching the amorphous carbon film and the patterning layer by using the photoresist film as an etching mask. Desired optical constants of an amorphous carbon film formed by sputtering can be obtained by controlling a substrate temperature and other parameters.

摘要翻译： 具有在形成在基板上的图案化层上形成非晶碳膜的步骤的图案形成方法，在非晶碳膜上形成光致抗蚀剂膜的步骤，选择性地曝光和显影光致抗蚀剂膜以形成光致抗蚀剂图案的步骤 以及通过使用光致抗蚀剂膜作为蚀刻掩模来连续干法蚀刻非晶碳膜和图案化层的步骤。 通过溅射形成的非晶碳膜的期望光学常数可以通过控制衬底温度和其它参数来获得。

公开(公告)号：US09570396B2

公开(公告)日：2017-02-14

申请号：US13217172

申请日：2011-08-24

申请人： Takayuki Enda

发明人： Takayuki Enda

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/32133 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76877 ,  H01L21/76885 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a first metal layer provided above a semiconductor substrate, an interlayer insulating film provided above the first metal layer, a second metal layer that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, the second metal layer being connected to the first metal layer, and a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer.

摘要翻译： 半导体器件包括设置在半导体衬底上的第一金属层，设置在第一金属层上方的层间绝缘膜，设置在形成于层间绝缘膜中并与下层接触的开口中的第二金属层， 第二金属层连接到第一金属层，第一阻挡层设置在第二金属层和层间绝缘膜之间，并且具有与下层不同的主要成分。

公开(公告)号：US08008778B2

公开(公告)日：2011-08-30

申请号：US11479379

申请日：2006-06-30

申请人： Takayuki Enda

发明人： Takayuki Enda

IPC分类号： H01L23/48

CPC分类号： H01L23/53238 ,  H01L21/32133 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76877 ,  H01L21/76885 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a first metal layer provided above a semiconductor substrate, an interlayer insulating film provided above the first metal layer, a second metal layer that is provided in an opening formed in the interlayer insulating film and is in contact with an underlying layer, the second metal layer being connected to the first metal layer, and a first barrier layer that is provided between the second metal layer and the interlayer insulating film and has a different main composition from that of the underlying layer.

摘要翻译： 半导体器件包括设置在半导体衬底上的第一金属层，设置在第一金属层上方的层间绝缘膜，设置在形成于层间绝缘膜中并与下层接触的开口中的第二金属层， 第二金属层连接到第一金属层，第一阻挡层设置在第二金属层和层间绝缘膜之间，并且具有与下层不同的主要成分。