发明授权
US07037857B2 Method for elimination of excessive field oxide recess for thin Si SOI
有权
消除薄Si SOI的过量场氧化物凹陷的方法
- 专利标题: Method for elimination of excessive field oxide recess for thin Si SOI
- 专利标题(中): 消除薄Si SOI的过量场氧化物凹陷的方法
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申请号: US10737115申请日: 2003-12-16
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公开(公告)号: US07037857B2公开(公告)日: 2006-05-02
- 发明人: Toni D. Van Gompel , Mark D. Hall , Mohamad Jahanbani , Michael D. Turner
- 申请人: Toni D. Van Gompel , Mark D. Hall , Mohamad Jahanbani , Michael D. Turner
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 代理商 Michael J. Balconi-Lamica; James L. Clingan, Jr.
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205 ; H01L21/31
摘要:
A method for forming trench isolation in an SOI substrate begins with a pad oxide followed by an antireflective coating (ARC) over the upper semiconductor layer of the SOI substrate. The pad oxide is kept to a thickness not greater than about 100 Angstroms. An opening is formed for the trench isolation that extends into the oxide below the upper semiconductor layer to expose a surface thereof. The pad oxide is recessed along its sidewall with an isotropic etch. This is followed by a thin, not greater than 50 Angstroms, oxide grown along the sidewall of the opening. This grown oxide avoids forming a recess between the ARC and the pad oxide and also avoids forming a void between the surface of the lower oxide layer and the grown oxide. This results in avoiding polysilicon stringers when the subsequent polysilicon gate layer is formed.