Invention Grant
- Patent Title: Magnetoresistive memory device assemblies
-
Application No.: US10920740Application Date: 2004-08-17
-
Publication No.: US07038286B2Publication Date: 2006-05-02
- Inventor: Hasan Nejad , James G. Deak
- Applicant: Hasan Nejad , James G. Deak
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L29/82
- IPC: H01L29/82

Abstract:
The invention includes a construction comprising an MRAM device between a pair of conductive lines. Each of the conductive lines can generate a magnetic field encompassing at least a portion of the MRAM device. Each of the conductive lines is surrounded on three sides by magnetic material to concentrate the magnetic fields generated by the conductive lines at the MRAM device. The invention also includes a method of forming an assembly containing MRAM devices. A plurality of MRAM devices are formed over a substrate. An electrically conductive material is formed over the MRAM devices, and patterned into a plurality of lines. The lines are in a one-to-one correspondence with the MRAM devices and are spaced from one another. After the conductive material is patterned into lines, a magnetic material is formed to extend over the lines and within spaces between the lines.
Public/Granted literature
- US20050040453A1 Magnetoresistive memory device assemblies Public/Granted day:2005-02-24
Information query
IPC分类: