- 专利标题: Planar spiral inductor structure with patterned microelectronic structure integral thereto
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申请号: US09821521申请日: 2001-03-29
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公开(公告)号: US07038294B2公开(公告)日: 2006-05-02
- 发明人: Ssu-Pin Ma , Yen-Shih Ho
- 申请人: Ssu-Pin Ma , Yen-Shih Ho
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Tung & Assoc.
- 主分类号: H01L29/00
- IPC分类号: H01L29/00
摘要:
Within a method for fabricating a microelectronic fabrication there is first provided a substrate. There is then formed over the substrate a spirally patterned conductor layer which terminates in a microelectronic structure within the center of the spirally patterned conductor layer. The spirally patterned conductor layer forms a planar spiral inductor, and the microelectronic structure formed within the center of the spirally patterned conductor layer further comprises a series of electrically interconnected sub-patterns. The method contemplates a microelectronic fabrication fabricated in accord with the method. The microelectronic fabrication is fabricated with optimal performance while occupying minimal microelectronic substrate area.
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