发明授权
US07045840B2 Nonvolatile semiconductor memory device comprising a variable resistive element containing a perovskite-type crystal structure
有权
包括含有钙钛矿型晶体结构的可变电阻元件的非易失性半导体存储器件
- 专利标题： Nonvolatile semiconductor memory device comprising a variable resistive element containing a perovskite-type crystal structure
- 专利标题（中）： 包括含有钙钛矿型晶体结构的可变电阻元件的非易失性半导体存储器件
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申请号： US11001744申请日： 2004-12-01
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公开(公告)号： US07045840B2公开(公告)日： 2006-05-16
- 发明人: Yukio Tamai , Nobuyoshi Awaya , Shinji Kobayashi , Hidechika Kawazoe , Toshimasa Suzuki , Hidetoshi Masuda , Naoto Hagiwara , Yuji Matsushita , Yuji Nishi
- 申请人： Yukio Tamai , Nobuyoshi Awaya , Shinji Kobayashi , Hidechika Kawazoe , Toshimasa Suzuki , Hidetoshi Masuda , Naoto Hagiwara , Yuji Matsushita , Yuji Nishi
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Morrison & Foerster LLP
- 优先权： JP2003-405718 20031204
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
In a nonvolatile semiconductor memory device including a variable resistive element formed by sequentially stacking a lower electrode, a variable resistor with a perovskite-type crystal structure, and an upper electrode, at least one of the lower electrode and the upper electrode is a particulate electrode configured to include a particulate conductor aggregate so that the contact area with the variable resistor at an interface is effectively reduced to realize high initial resistance of the variable resistive element. Further, a film of the variable resistor is preferably formed so as to be in a highly crystalline state.
公开/授权文献
- US20050145910A1 Nonvolatile semiconductor memory device 公开/授权日：2005-07-07
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