发明授权
- 专利标题: Reflective semiconductor optical amplifier
- 专利标题(中): 反射半导体光放大器
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申请号: US10937625申请日: 2004-09-09
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公开(公告)号: US07046435B2公开(公告)日: 2006-05-16
- 发明人: Hyun-Cheol Shin , Jeong-Seok Lee , Ho-In Kim , In-Kuk Yun , Seung-Woo Kim , Seong-Taek Hwang
- 申请人: Hyun-Cheol Shin , Jeong-Seok Lee , Ho-In Kim , In-Kuk Yun , Seung-Woo Kim , Seong-Taek Hwang
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics CO LTD
- 当前专利权人: Samsung Electronics CO LTD
- 当前专利权人地址: KR Suwon-si
- 代理机构: Cha & Reiter LLC
- 优先权: KR10-2004-0011157 20040219
- 主分类号: H01S3/00
- IPC分类号: H01S3/00
摘要:
A reflective semiconductor optical amplifier includes a substrate, a waveguide with a buried heterostructure formed by sequentially laminating a lower cladding, an active layer, and an upper cladding on the substrate, the waveguide including, sequentially, respective straight line, curved and tapered waveguide regions. A current blocking layer surrounds the waveguide to prevent electric current from flowing outside the active layer. Selectively etching portions of the current blocking layer and the substrate around the waveguide forms a trench to reduce parasitic capacitance. Further features include a window region on one end of the tapered waveguide region, an anti-reflection surface on one end of the window region, and a high-reflection surface on one end of the straight line waveguide region.
公开/授权文献
- US20050185264A1 Reflective semiconductor optical amplifier 公开/授权日:2005-08-25
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