Invention Grant
US07049009B2 Silver selenide film stoichiometry and morphology control in sputter deposition
失效
硒化银膜在溅射沉积中的化学计量和形态控制
- Patent Title: Silver selenide film stoichiometry and morphology control in sputter deposition
- Patent Title (中): 硒化银膜在溅射沉积中的化学计量和形态控制
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Application No.: US11012154Application Date: 2004-12-16
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Publication No.: US07049009B2Publication Date: 2006-05-23
- Inventor: Jiutao Li , Keith Hampton , Allen McTeer
- Applicant: Jiutao Li , Keith Hampton , Allen McTeer
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro Morin & Oshinsky LLP
- Main IPC: B32B15/00
- IPC: B32B15/00 ; H01B1/02

Abstract:
A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.
Public/Granted literature
- US20050098428A1 Silver selenide film stoichiometry and morphology control in sputter deposition Public/Granted day:2005-05-12
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