公开(公告)号：US20080210921A1

公开(公告)日：2008-09-04

申请号：US12073057

申请日：2008-02-28

申请人： Jiutao Li ,  Keith Hampton ,  Allen McTeer

发明人： Jiutao Li ,  Keith Hampton ,  Allen McTeer

IPC分类号： H01L47/00

CPC分类号： H01L21/02631 ,  C23C14/0021 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/3492 ,  C23C14/548 ,  H01L21/02266 ,  Y10S428/938 ,  Y10T428/12896

摘要： A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.

公开(公告)号：US07364644B2

公开(公告)日：2008-04-29

申请号：US10230279

申请日：2002-08-29

申请人： Jiutao Li ,  Keith Hampton ,  Allen McTeer

发明人： Jiutao Li ,  Keith Hampton ,  Allen McTeer

IPC分类号： C23C14/35

CPC分类号： H01L21/02631 ,  C23C14/0021 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/3492 ,  C23C14/548 ,  H01L21/02266 ,  Y10S428/938 ,  Y10T428/12896

摘要： A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.

摘要翻译： 溅射沉积硒化银并控制溅射沉积的硒化银膜的化学计量和结节缺陷形成的方法。 该方法包括使用溅射沉积工艺在约0.3mTorr至约10mTorr的压力下沉积硒化银。 根据本发明的一个方面，RF溅射沉积工艺可以优选地在约2mTorr至约3mTorr的压力下使用。 根据本发明的另一方面，脉冲DC溅射沉积工艺可优选地在约4mTorr至约5mTorr的压力下使用。

公开(公告)号：US07049009B2

公开(公告)日：2006-05-23

申请号：US11012154

申请日：2004-12-16

申请人： Jiutao Li ,  Keith Hampton ,  Allen McTeer

发明人： Jiutao Li ,  Keith Hampton ,  Allen McTeer

IPC分类号： B32B15/00 ,  H01B1/02

CPC分类号： H01L21/02631 ,  C23C14/0021 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/3492 ,  C23C14/548 ,  H01L21/02266 ,  Y10S428/938 ,  Y10T428/12896

摘要： A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.

摘要翻译： 溅射沉积硒化银并控制溅射沉积的硒化银膜的化学计量和结节缺陷形成的方法。 该方法包括使用溅射沉积工艺在约0.3mTorr至约10mTorr的压力下沉积硒化银。 根据本发明的一个方面，RF溅射沉积工艺可以优选地在约2mTorr至约3mTorr的压力下使用。 根据本发明的另一方面，脉冲DC溅射沉积工艺可优选地在约4mTorr至约5mTorr的压力下使用。

公开(公告)号：US20050098428A1

公开(公告)日：2005-05-12

申请号：US11012154

申请日：2004-12-16

申请人： Jiutao Li ,  Keith Hampton ,  Allen McTeer

发明人： Jiutao Li ,  Keith Hampton ,  Allen McTeer

IPC分类号： C23C14/00 ,  C23C14/06 ,  C23C14/34 ,  C23C14/54 ,  C30B23/02 ,  G11C11/34 ,  C23C14/32 ,  C25D3/46 ,  H01L21/4763

CPC分类号： H01L21/02631 ,  C23C14/0021 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/3492 ,  C23C14/548 ,  H01L21/02266 ,  Y10S428/938 ,  Y10T428/12896

摘要： A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.

摘要翻译： 溅射沉积硒化银并控制溅射沉积的硒化银膜的化学计量和结节缺陷形成的方法。 该方法包括使用溅射沉积工艺在约0.3mTorr至约10mTorr的压力下沉积硒化银。 根据本发明的一个方面，RF溅射沉积工艺可以优选地在约2mTorr至约3mTorr的压力下使用。 根据本发明的另一方面，脉冲DC溅射沉积工艺可优选地在约4mTorr至约5mTorr的压力下使用。

公开(公告)号：US20090098717A1

公开(公告)日：2009-04-16

申请号：US12249744

申请日：2008-10-10

申请人： Jiutao Li ,  Allen McTeer ,  Gregory Herdt ,  Trung T. Doan

发明人： Jiutao Li ,  Allen McTeer ,  Gregory Herdt ,  Trung T. Doan

IPC分类号： H01L31/20

CPC分类号： C23C14/548 ,  C23C14/0623 ,  C23C14/3464 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/1625

摘要： The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GexSe1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.

摘要翻译： 本发明涉及允许诸如硒化锗（GexSe1-x）的硫族化物玻璃掺杂金属如银，铜或锌的方法和装置，而不用紫外线（UV）光二极化步骤来掺杂硫族化物 玻璃与金属。 掺杂有金属的硫族化物玻璃可用于将数据存储在存储器件中。 有利的是，系统和方法共同溅射金属和硫族化物玻璃，并允许相对精确和有效地控制掺杂金属和硫族化物玻璃之间的组成比。 进一步有利的是，这些系统和方法能够在硫族化物玻璃和金属的形成层的深度上以相对高的均匀度掺杂硫族化物玻璃。 而且，这些系统和方法允许以薄膜深度的受控方式改变金属浓度。

公开(公告)号：US07446393B2

公开(公告)日：2008-11-04

申请号：US11710517

申请日：2007-02-26

申请人： Jiutao Li ,  Allen McTeer ,  Gregory Herdt ,  Trung T. Doan

发明人： Jiutao Li ,  Allen McTeer ,  Gregory Herdt ,  Trung T. Doan

IPC分类号： H01L29/20

CPC分类号： C23C14/548 ,  C23C14/0623 ,  C23C14/3464 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/1625

摘要： The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GexSe1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.

摘要翻译： 本发明涉及允许硫族化物玻璃如硒化锗（Ge x Sb 1-x x）掺杂金属如银的方法和装置， 铜或锌，而不用紫外线（UV）光二极化步骤来用金属掺杂硫族化物玻璃。 掺杂有金属的硫族化物玻璃可用于将数据存储在存储器件中。 有利的是，系统和方法共同溅射金属和硫族化物玻璃，并允许相对精确和有效地控制掺杂金属和硫族化物玻璃之间的组成比。 进一步有利的是，这些系统和方法能够在硫族化物玻璃和金属的形成层的深度上以相对高的均匀度掺杂硫族化物玻璃。 而且，这些系统和方法允许以薄膜深度的受控方式改变金属浓度。

公开(公告)号：US20060197225A1

公开(公告)日：2006-09-07

申请号：US11074106

申请日：2005-03-07

申请人： Qi Pan ,  Jiutao Li ,  Yongjun Hu ,  Allen McTeer

发明人： Qi Pan ,  Jiutao Li ,  Yongjun Hu ,  Allen McTeer

IPC分类号： H01L23/52 ,  H01L21/44 ,  H01L29/772 ,  H01L21/8234

CPC分类号： H01L21/76838 ,  H01L21/28061 ,  H01L21/28518 ,  H01L21/2855 ,  H01L23/485 ,  H01L27/10891 ,  H01L29/4933 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention includes an electrically conductive line, methods of forming electrically conductive lines, and methods of reducing titanium silicide agglomeration in the fabrication of titanium silicide over polysilicon transistor gate lines. In one implementation, a method of forming an electrically conductive line includes providing a silicon-comprising layer over a substrate. An electrically conductive layer is formed over the silicon-comprising layer. An MSixNy-comprising layer is formed over the electrically conductive layer, where “x” is from 0 to 3.0, “y” is from 0.5 to 10, and “M” is at least one of Ta, Hf, Mo, and W. An MSiz-comprising layer is formed over the MSixNy-comprising layer, where “z” is from 1 to 3.0. A TiSia-comprising layer is formed over the MSiz-comprising layer, where “a” is from 1 to 3.0. The silicon-comprising layer, the electrically conductive layer, the MSixNy-comprising layer, the MSiz-comprising layer, and the TiSia-comprising layer are patterned into a stack comprising an electrically conductive line. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括导电线，形成导电线的方法，以及在多晶硅晶体管栅极线上制造钛硅化物时还原钛硅化物聚集的方法。 在一个实施方案中，形成导电线的方法包括在衬底上提供含硅层。 在含硅层之上形成导电层。 在导电层上方形成了一个MSi x N N y S y - 含量，其中“x”为0至3.0，“y”为0.5至10，以及 “M”是Ta，Hf，Mo和W中的至少一种。在MSi x N y y上，形成MSiZb含量层。 其中“z”为1〜3.0。 在MSiZ包含层上形成TiSi 1 a含量层，其中“a”为1至3.0。 包含硅的层，导电层，包含MSi x N的混合层，包含MSi的混合层和 将TiSi 1 a含有层图案化成包括导电线的堆叠。 考虑了其他方面和实现。

公开(公告)号：US06709958B2

公开(公告)日：2004-03-23

申请号：US09943426

申请日：2001-08-30

申请人： Jiutao Li ,  Allen McTeer

发明人： Jiutao Li ,  Allen McTeer

IPC分类号： H01L2100

CPC分类号： C23C14/5846 ,  C23C14/0623 ,  C23C14/544 ,  H01L27/2409 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/143 ,  H01L45/1658

摘要： Methods of forming metal-doped chalcogenide layers and devices containing such doped chalcogenide layers include using a plasma to induce diffusion of metal into a chalcogenide layer concurrently with metal deposition. The plasma contains at least one noble gas of low atomic weight, such as neon or helium. The plasma has a sputter yield sufficient to sputter a metal target and a UV component of its emitted spectrum sufficient to induce diffusion of the sputtered metal into the chalcogenide layer. Using such methods, a conductive layer can be formed on the doped chalcogenide layer in situ. In integrated circuit devices, such as non-volatile chalcogenide memory devices, doping of the chalcogenide layer concurrently with metal deposition and formation of a conductive layer in situ with the doping of the chalcogenide layer reduces contamination concerns and physical damage resulting from moving the device substrate from tool to tool, thus facilitating improved device reliability.

公开(公告)号：US07964436B2

公开(公告)日：2011-06-21

申请号：US12249744

申请日：2008-10-10

申请人： Jiutao Li ,  Allen McTeer ,  Gregory Herdt ,  Trung T. Doan

发明人： Jiutao Li ,  Allen McTeer ,  Gregory Herdt ,  Trung T. Doan

IPC分类号： H01L21/00

CPC分类号： C23C14/548 ,  C23C14/0623 ,  C23C14/3464 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/1625

摘要： The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GexSe1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.

摘要翻译： 本发明涉及允许诸如硒化锗（GexSe1-x）的硫族化物玻璃掺杂金属如银，铜或锌的方法和装置，而不用紫外线（UV）光二极化步骤来掺杂硫族化物 玻璃与金属。 掺杂有金属的硫族化物玻璃可用于将数据存储在存储器件中。 有利的是，系统和方法共同溅射金属和硫族化物玻璃，并允许相对精确和有效地控制掺杂金属和硫族化物玻璃之间的组成比。 进一步有利的是，这些系统和方法能够在硫族化物玻璃和金属的形成层的深度上以相对高的均匀度掺杂硫族化物玻璃。 而且，这些系统和方法允许以薄膜深度的受控方式改变金属浓度。

公开(公告)号：US20110014115A1

公开(公告)日：2011-01-20

申请号：US12841035

申请日：2010-07-21

申请人： Jiutao Li ,  Allen McTeer

发明人： Jiutao Li ,  Allen McTeer

IPC分类号： C01B19/04

CPC分类号： C23C14/3492 ,  C23C14/0623

摘要： Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm2, using sputter pressures of less than about 40 mTorr and preferably less than about 10 mTorr, using sputter gasses with molecular weight greater than that of neon, using cooling apparatus having a coolant flow rate at least greater than 2.5 gallons per minute and a coolant temperature less than about 25° C., using a magnetron sputtering system having a magnetron placed a sufficient distance from a silver selenide sputter target so as to maintain a sputter target temperature of less than about 350° C. and preferably below about 250° C. during sputter deposition, and heating the sputter deposition substrate to greater than about 30° C.

摘要翻译： 提供了用于溅射沉积硒化银并控制溅射沉积的硒化银膜上及其上的缺陷形成的方法和装置。 还提供了形成包含α相和β相的沉积的硒化银的方法。 所述方法包括使用小于约200W的溅射功率，使用小于约1W / cm 2的溅射功率密度，使用小于约40mTorr，优选小于约10mTorr的溅射压力沉积硒化银，使用溅射气体与 使用具有至少大于2.5加仑/分钟的冷却剂流速和小于约25℃的冷却剂温度的冷却装置，使用磁控溅射系统，该磁控溅射系统具有放置在距离 硒化银溅射靶，以便在溅射沉积期间将溅射靶温度保持在小于约350℃，优选低于约250℃，并将溅射沉积衬底加热至大约30℃。