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145 条记录 (耗时 0.021 秒)

    Silver selenide film stoichiometry and morphology control in sputter deposition
    2.
    发明授权
    Silver selenide film stoichiometry and morphology control in sputter deposition 失效
    硒化银膜在溅射沉积中的化学计量和形态控制

    公开(公告)号：US07364644B2

    公开(公告)日：2008-04-29

    申请号：US10230279

    申请日：2002-08-29

    申请人： Jiutao Li ,  Keith Hampton ,  Allen McTeer

    发明人： Jiutao Li ,  Keith Hampton ,  Allen McTeer

    IPC分类号： C23C14/35

    CPC分类号： H01L21/02631 ,  C23C14/0021 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/3492 ,  C23C14/548 ,  H01L21/02266 ,  Y10S428/938 ,  Y10T428/12896

    摘要： A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.

    摘要翻译： 溅射沉积硒化银并控制溅射沉积的硒化银膜的化学计量和结节缺陷形成的方法。 该方法包括使用溅射沉积工艺在约0.3mTorr至约10mTorr的压力下沉积硒化银。 根据本发明的一个方面，RF溅射沉积工艺可以优选地在约2mTorr至约3mTorr的压力下使用。 根据本发明的另一方面，脉冲DC溅射沉积工艺可优选地在约4mTorr至约5mTorr的压力下使用。

    Silver selenide film stoichiometry and morphology control in sputter deposition
    3.
    发明授权
    Silver selenide film stoichiometry and morphology control in sputter deposition 失效
    硒化银膜在溅射沉积中的化学计量和形态控制

    公开(公告)号：US07049009B2

    公开(公告)日：2006-05-23

    申请号：US11012154

    申请日：2004-12-16

    申请人： Jiutao Li ,  Keith Hampton ,  Allen McTeer

    发明人： Jiutao Li ,  Keith Hampton ,  Allen McTeer

    IPC分类号： B32B15/00 ,  H01B1/02

    CPC分类号： H01L21/02631 ,  C23C14/0021 ,  C23C14/0623 ,  C23C14/3407 ,  C23C14/3492 ,  C23C14/548 ,  H01L21/02266 ,  Y10S428/938 ,  Y10T428/12896

    摘要： A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.

    摘要翻译： 溅射沉积硒化银并控制溅射沉积的硒化银膜的化学计量和结节缺陷形成的方法。 该方法包括使用溅射沉积工艺在约0.3mTorr至约10mTorr的压力下沉积硒化银。 根据本发明的一个方面，RF溅射沉积工艺可以优选地在约2mTorr至约3mTorr的压力下使用。 根据本发明的另一方面，脉冲DC溅射沉积工艺可优选地在约4mTorr至约5mTorr的压力下使用。

    VALVE GATE WITHIN A VENTURI GAP OF A VENTURI DEVICE FOR PRODUCING VACUUM
    7.
    发明申请
    VALVE GATE WITHIN A VENTURI GAP OF A VENTURI DEVICE FOR PRODUCING VACUUM 审中-公开

    公开(公告)号：US20180080567A1

    公开(公告)日：2018-03-22

    申请号：US15711108

    申请日：2017-09-21

    申请人： Keith Hampton ,  David E. Fletcher ,  Brian M. Graichen ,  James H. Miller

    发明人： Keith Hampton ,  David E. Fletcher ,  Brian M. Graichen ,  James H. Miller

    IPC分类号： F16K3/02 ,  F16K27/04 ,  B60T13/72

    摘要： Venturi devices are disclosed herein that include a body defining a Venturi gap between an outlet end of a converging motive section and an inlet end of a diverging discharge section, having a suction port in fluid communication with the Venturi gap, a gate valve linearly translatable to open and close the Venturi gap, and an actuator connected to the gate valve to operatively move the gate valve between an open position and a closed position. The gate valve, in a longitudinal cross-section, is generally U-shaped, thereby having continuous, opposing sides that one each close the motive outlet and the discharge inlet and defining a void between the opposing sides that is in fluid communication with the suction port. The converging motive section defines a circular-shaped motive inlet and defines an elliptical- or polygonal-shaped motive outlet, and the diverging discharge section defines an elliptical- or polygonal-shaped discharge inlet.

    Bypass valve in an apparatus for producing vacuum
    8.
    发明授权
    Bypass valve in an apparatus for producing vacuum 有权

    公开(公告)号：US09919689B2

    公开(公告)日：2018-03-20

    申请号：US15613641

    申请日：2017-06-05

    申请人： David E. Fletcher ,  Brian M. Graichen ,  Keith Hampton

    发明人： David E. Fletcher ,  Brian M. Graichen ,  Keith Hampton

    IPC分类号： F16K11/00 ,  B60T13/52 ,  B60T17/02

    CPC分类号： B60T13/52 ,  B60T17/02 ,  B60T17/04 ,  Y10T137/87587

    摘要： Venturi devices are disclosed that have a housing defining a conduit having a Venturi gap. Downstream of and bypassing the Venturi gap is a bypass check valve that defines an internal cavity having a first seat, a second seat, an inlet port, at least two outlet ports, and a seal member seated therein that is translatable between a closed position against the first seat and an open position against the second seat. The two outlet ports of the bypass check valve enter the conduit at opposing positions disposed a distance from a top of the conduit, which is located at a midsagittal plane of the housing. Further, a transition from a tapering section downstream of the Venturi gap and upstream of each of the two outlet ports to a discharge section downstream of the two outlet ports forms a gradually, continuously tapering interior surface of the conduit.

    MAGNETICALLY ACTUATED SHUT-OFF VALVE
    10.
    发明申请
    MAGNETICALLY ACTUATED SHUT-OFF VALVE 有权
    磁力开关阀

    公开(公告)号：US20170037983A1

    公开(公告)日：2017-02-09

    申请号：US14818851

    申请日：2015-08-05

    申请人： David E. Fletcher ,  Brian M. Graichen ,  James H. Miller ,  Keith Hampton

    发明人： David E. Fletcher ,  Brian M. Graichen ,  James H. Miller ,  Keith Hampton

    IPC分类号： F16K31/06

    CPC分类号： F16K31/0675 ,  F16K3/02 ,  F16K3/0254 ,  F16K3/30 ,  F16K3/314 ,  F16K31/06 ,  F16K31/0668 ,  F16K31/0679 ,  F16K31/082 ,  F16K31/084

    摘要： A latching solenoid gate valve comprising is disclosed, and includes a housing defining a conduit having a flow path therethrough and a cavity separating the conduit into a first section and a second section. The latching solenoid assembly also includes a gate assembly enclosed within the cavity of the housing and a first solenoid assembly and a second solenoid assembly seated within the cavity with the gate assembly linearly translatable therebetween. The gate assembly includes a first gate member comprising magnetizable material and defining an opening therethrough. The first gate member is linearly movable within the cavity between an open position with the opening aligned with the conduit and a closed position with the opening out of alignment with the conduit. The first gate member is moved linearly from either the open position or the closed position.

    摘要翻译： 公开了一种闭锁螺线管闸阀，其包括限定具有穿过其中的流动通道的导管的壳体和将导管分隔成第一部分和第二部分的腔。 闭锁螺线管组件还包括封闭在壳体的空腔内的门组件和位于腔内的第一螺线管组件和第二螺线管组件，其中门组件可在其间线性地平移。 门组件包括第一门构件，其包括可磁化材料并限定穿过其中的开口。 第一门构件可以在空腔内在与开口与导管对准的打开位置和闭合位置之间线性移动，其中开口不与导管对准。 第一门构件从打开位置或关闭位置线性地移动。