- 专利标题: Method of measuring meso-scale structures on wafers
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申请号: US10919718申请日: 2004-08-17
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公开(公告)号: US07049633B2公开(公告)日: 2006-05-23
- 发明人: Kenneth C. Johnson , Fred E. Stanke
- 申请人: Kenneth C. Johnson , Fred E. Stanke
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Stallman & Pollock LLP
- 主分类号: H01L23/58
- IPC分类号: H01L23/58
摘要:
A method of measuring at least one parameter associated with a portion of a sample having formed thereon one or more structures with at least two zones each having an associated zone reflectance property. The method includes the steps of illuminating the zones with broadband light, and measuring at least one reflectance property of light reflected from the at least two zones. The measurement includes a substantial portion of non-specularly scattered light, thereby increasing the quality of the measurement. The method further includes the step of fitting a parameterized model to the measured reflectance property. The parameterized model mixes the zone reflectance properties of the zones to account for partially coherent light interactions between the two zones.
公开/授权文献
- US20050057755A1 Method of measuring meso-scale structures on wafers 公开/授权日:2005-03-17
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