发明授权
- 专利标题: Charge-trapping memory device including high permittivity strips
- 专利标题(中): 电荷捕获存储器件包括高电容率带
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申请号: US10715142申请日: 2003-11-17
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公开(公告)号: US07049651B2公开(公告)日: 2006-05-23
- 发明人: Thomas Mikolajick , Hans Reisinger , Josef Willer , Corvin Liaw
- 申请人: Thomas Mikolajick , Hans Reisinger , Josef Willer , Corvin Liaw
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L29/788
- IPC分类号: H01L29/788
摘要:
The charge-trapping layer comprises two strips above the source and drain junctions. The thicknesses of the charge-trapping layer and the gate dielectric are chosen to facilitate Fowler-Nordheim-tunnelling of electrons into the strips during an erasure process. Programming is performed by injection of hot holes into the strips individually for two-bit storage.