发明授权
US07053411B2 Method for treating semiconductor processing components and components formed thereby
有权
用于处理由此形成的半导体处理部件和部件的方法
- 专利标题: Method for treating semiconductor processing components and components formed thereby
- 专利标题(中): 用于处理由此形成的半导体处理部件和部件的方法
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申请号: US10828680申请日: 2004-04-21
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公开(公告)号: US07053411B2公开(公告)日: 2006-05-30
- 发明人: Andrew G. Haerle , Richard F. Buckley , Richard R. Hengst
- 申请人: Andrew G. Haerle , Richard F. Buckley , Richard R. Hengst
- 申请人地址: US MA Worcester
- 专利权人: Saint-Gobain Ceramics & Plastics, Inc.
- 当前专利权人: Saint-Gobain Ceramics & Plastics, Inc.
- 当前专利权人地址: US MA Worcester
- 代理机构: Toler, Larson & Abel, LLP
- 代理商 Thomas G. Field, III
- 主分类号: H01L31/312
- IPC分类号: H01L31/312
摘要:
A method for treating a semiconductor processing component, including: exposing the component to a halogen gas at an elevated temperature, oxidizing the component to form an oxide layer, and removing the oxide layer.