- 专利标题: Semiconductor device and method of manufacturing semiconductor device
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申请号: US10772280申请日: 2004-02-06
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公开(公告)号: US07053455B2公开(公告)日: 2006-05-30
- 发明人: Masahiro Koike , Masato Koyama , Tsunehiro Ino , Yuuichi Kamimuta , Akira Takashima , Masamichi Suzuki , Akira Nishiyama
- 申请人: Masahiro Koike , Masato Koyama , Tsunehiro Ino , Yuuichi Kamimuta , Akira Takashima , Masamichi Suzuki , Akira Nishiyama
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2003-031466 20030207
- 主分类号: H01L29/94
- IPC分类号: H01L29/94 ; H01L31/62
摘要:
Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.