公开(公告)号：US20060186488A1

公开(公告)日：2006-08-24

申请号：US11407066

申请日：2006-04-20

申请人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

发明人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

IPC分类号： H01L29/94

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

摘要翻译： 公开了一种半导体器件，其包括基板，形成在基板上方并且包含金属Si，N和O的绝缘膜，所述绝缘膜含有大于金属 - 金属键和金属-Si键的总和的金属-N键 ，以及形成在绝缘膜上方的电极。

公开(公告)号：US20060186489A1

公开(公告)日：2006-08-24

申请号：US11407077

申请日：2006-04-20

申请人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

发明人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

IPC分类号： H01L29/94

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

公开(公告)号：US07053455B2

公开(公告)日：2006-05-30

申请号：US10772280

申请日：2004-02-06

申请人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

发明人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

IPC分类号： H01L29/94 ,  H01L31/62

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

公开(公告)号：US07348644B2

公开(公告)日：2008-03-25

申请号：US11407077

申请日：2006-04-20

申请人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

发明人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

IPC分类号： H01L29/94

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

摘要翻译： 公开了一种半导体器件，其包括基板，形成在基板上方并且包含金属Si，N和O的绝缘膜，所述绝缘膜含有大于金属 - 金属键和金属-Si键的总和的金属-N键 ，以及形成在绝缘膜上方的电极。

公开(公告)号：US07300838B2

公开(公告)日：2007-11-27

申请号：US11407066

申请日：2006-04-20

申请人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

发明人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

IPC分类号： H01L21/8238

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

摘要翻译： 公开了一种半导体器件，其包括基板，形成在基板上方并且包含金属Si，N和O的绝缘膜，所述绝缘膜含有大于金属 - 金属键和金属-Si键的总和的金属-N键 ，以及形成在绝缘膜上方的电极。

公开(公告)号：US20080258264A1

公开(公告)日：2008-10-23

申请号：US12137929

申请日：2008-06-12

申请人： Yoshiki Kamata ,  Akira Nishiyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Masahiro Koike

发明人： Yoshiki Kamata ,  Akira Nishiyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Masahiro Koike

IPC分类号： H01L29/20 ,  H01L21/469

CPC分类号： H01L29/7881 ,  H01L29/40114 ,  H01L29/513

摘要： Disclosed is a semiconductor device comprising a Ge semiconductor area, and an insulating film area, formed in direct contact with the Ge semiconductor area, containing metal, germanium, and oxygen.

摘要翻译： 公开了一种半导体器件，其包括与包含金属，锗和氧的Ge半导体区域直接接触形成的Ge半导体区域和绝缘膜区域。

公开(公告)号：US20050142769A1

公开(公告)日：2005-06-30

申请号：US11011044

申请日：2004-12-15

申请人： Yoshiki Kamata ,  Akira Nishiyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Masahiro Koike

发明人： Yoshiki Kamata ,  Akira Nishiyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Masahiro Koike

IPC分类号： H01L21/20 ,  H01L21/28 ,  H01L21/283 ,  H01L21/31 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/469 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L29/7881 ,  H01L29/40114 ,  H01L29/513

摘要： Disclosed is a semiconductor device comprising a Ge semiconductor area, and an insulating film area, formed in direct contact with the Ge semiconductor area, containing metal, germanium, and oxygen.

摘要翻译： 公开了一种半导体器件，其包括与包含金属，锗和氧的Ge半导体区域直接接触形成的Ge半导体区域和绝缘膜区域。

公开(公告)号：US07943984B2

公开(公告)日：2011-05-17

申请号：US12233023

申请日：2008-09-18

申请人： Masahiro Koike ,  Yuuichiro Mitani ,  Yasushi Nakasaki ,  Masato Koyama

发明人： Masahiro Koike ,  Yuuichiro Mitani ,  Yasushi Nakasaki ,  Masato Koyama

IPC分类号： H01L29/792

CPC分类号： H01L27/11521 ,  H01L27/11568

摘要： A nonvolatile semiconductor memory apparatus includes: a memory element including: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate located between the source region and the drain region, having sites that perform electron trapping and releasing and are formed by adding an element different from a base material, and including insulating layers having different dielectric constants, the sites having a higher level than a Fermi level of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.

摘要翻译： 一种非易失性半导体存储装置，包括：存储元件，包括：半导体衬底; 在半导体衬底中形成为彼此间隔一定距离的源极区域和漏极区域; 形成在位于源极区域和漏极区域之间的半导体衬底的一部分上的第一绝缘膜，具有进行电子俘获和释放的位置，并且通过添加不同于基底材料的元件形成，并且包括具有不同电介质的绝缘层 常数，具有比形成半导体衬底的材料的费米能级高的位置; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。

公开(公告)号：US06326670B1

公开(公告)日：2001-12-04

申请号：US09522593

申请日：2000-03-10

申请人： Akira Nishiyama ,  Masahiro Koike

发明人： Akira Nishiyama ,  Masahiro Koike

IPC分类号： H01L31119

CPC分类号： H01L21/28185 ,  H01L21/28176 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/28247 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31662 ,  H01L21/31691 ,  H01L29/41783 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66575 ,  H01L29/66659 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a Si oxide film formed between a Si substrate and a metallic oxide film is prevented from growing when an annealing treatment is performed after the metallic oxide film is formed, and a method for manufacturing the same. A semiconductor device comprises a silicon substrate, a gate insulating film formed on the silicon substrate and made of the metallic oxide film, and a gate electrode formed on the gate insulating film, wherein an interface film formed between the gate insulating film and the Si substrate is thinner at the ends of the gate insulating film than in the center thereof.

摘要翻译： 一种半导体器件包括在形成在Si衬底和金属氧化物膜之间形成的Si氧化物膜时，在形成金属氧化物膜之后进行退火处理时，可以防止生长Si氧化膜及其制造方法。1。一种半导体器件，包括硅 基板，形成在硅基板上并由金属氧化物膜构成的栅极绝缘膜和形成在栅极绝缘膜上的栅电极，其中形成在栅极绝缘膜和Si基板之间的界面膜在端部处较薄 栅绝缘膜比其中心。

公开(公告)号：US20090267134A1

公开(公告)日：2009-10-29

申请号：US12233023

申请日：2008-09-18

申请人： Masahiro Koike ,  Yuuichiro Mitani ,  Yasushi Nakasaki ,  Masato Koyama

发明人： Masahiro Koike ,  Yuuichiro Mitani ,  Yasushi Nakasaki ,  Masato Koyama

IPC分类号： H01L29/792

CPC分类号： H01L27/11521 ,  H01L27/11568

摘要： A nonvolatile semiconductor memory apparatus includes: a memory element including: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate located between the source region and the drain region, having sites that perform electron trapping and releasing and are formed by adding an element different from a base material, and including insulating layers having different dielectric constants, the sites having a higher level than a Fermi level of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.

摘要翻译： 一种非易失性半导体存储装置，包括：存储元件，包括：半导体衬底; 在半导体衬底中形成为彼此间隔一定距离的源极区域和漏极区域; 形成在位于源极区域和漏极区域之间的半导体衬底的一部分上的第一绝缘膜，具有进行电子俘获和释放的位置，并且通过添加不同于基底材料的元件形成，并且包括具有不同电介质的绝缘层 常数，具有比形成半导体衬底的材料的费米能级高的位置; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。