Invention Grant
- Patent Title: Passivation layer structure
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Application No.: US10060431Application Date: 2002-01-30
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Publication No.: US07054469B2Publication Date: 2006-05-30
- Inventor: Siegfried Röhl , Paul-Werner Von Basse , Thomas Scheiter , Thorsten Sasse , Heinz Opolka
- Applicant: Siegfried Röhl , Paul-Werner Von Basse , Thomas Scheiter , Thorsten Sasse , Heinz Opolka
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agent Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
- Priority: DE19935910 19990730
- Main IPC: G06K9/00
- IPC: G06K9/00

Abstract:
A conductor layer is patterned into flat portions, for example of a fingerprint sensor that effects capacitive measurement. The conductor layer is fragmented in a lattice-like manner by cutouts so that an applied passivation layer rests on a base layer that is present beneath the conductor layer. The interlaminar shear strength of the passivation is increased in this way.
Public/Granted literature
- US20020109209A1 Passivation layer structure Public/Granted day:2002-08-15
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