发明授权
US07056784B2 Methods of forming capacitors by ALD to prevent oxidation of the lower electrode
失效
通过ALD形成电容器以防止下部电极氧化的方法
- 专利标题: Methods of forming capacitors by ALD to prevent oxidation of the lower electrode
- 专利标题(中): 通过ALD形成电容器以防止下部电极氧化的方法
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申请号: US10914824申请日: 2004-08-09
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公开(公告)号: US07056784B2公开(公告)日: 2006-06-06
- 发明人: Vishwanath Bhat , Chris M. Carlson , F. Daniel Gealy
- 申请人: Vishwanath Bhat , Chris M. Carlson , F. Daniel Gealy
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Wells St. John P.S.
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242
摘要:
A method of forming a capacitor includes forming a conductive metal first electrode layer over a substrate, with the conductive metal being oxidizable to a higher degree at and above an oxidation temperature as compared to any degree of oxidation below the oxidation temperature. At least one oxygen containing vapor precursor is fed to the conductive metal first electrode layer below the oxidation temperature under conditions effective to form a first portion oxide material of a capacitor dielectric region over the conductive metal first electrode layer. At least one vapor precursor is fed over the first portion at a temperature above the oxidation temperature effective to form a second portion oxide material of the capacitor dielectric region over the first portion. The oxide material of the first portion and the oxide material of the second portion are common in chemical composition. A conductive second electrode layer is formed over the second portion oxide material of the capacitor dielectric region.
公开/授权文献
- US20050032325A1 Methods of forming capacitors 公开/授权日:2005-02-10