Invention Grant
US07060587B2 Method for forming macropores in a layer and products obtained thereof 失效
层中形成大孔的方法及其获得的产物

Method for forming macropores in a layer and products obtained thereof
Abstract:
A method for forming macropores in a substrate is disclosed. On a substrate a pattern of submicron features is formed. This pattern is covered with a layer, which is preferably selectively removable with respect to the substrate and the submicron features. This cover layer is removed until the submicron features are exposed. The submicron features are then etched selectively to the cover layer, thereby creating a pattern of submicron openings in this cover layer. The patterned cover layer is used as a hardmask to etch macropores in the substrate.
Information query
Patent Agency Ranking
0/0