Invention Grant
- Patent Title: Semiconductor laser with a weakly coupled grating
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Application No.: US10212463Application Date: 2002-08-05
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Publication No.: US07061962B2Publication Date: 2006-06-13
- Inventor: Johann Peter Reithmaier , Lars Bach
- Applicant: Johann Peter Reithmaier , Lars Bach
- Applicant Address: DE Gerbrunn
- Assignee: nanoplus GmbH
- Current Assignee: nanoplus GmbH
- Current Assignee Address: DE Gerbrunn
- Agency: Michaelson & Associates
- Agent Peter L. Michaelson; George Wolken, Jr.
- Priority: EP01118970 20010806
- Main IPC: H01S3/08
- IPC: H01S3/08 ; H01S5/00

Abstract:
A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.
Public/Granted literature
- US20030043874A1 Semiconductor laser with a weakly coupled grating Public/Granted day:2003-03-06
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